Oxide semiconductor film and semiconductor device

ABSTRACT

An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

TECHNICAL FIELD

An embodiment of the present invention relates to an oxide semiconductorfilm and a semiconductor device including the oxide semiconductor film.

In this specification, a semiconductor device refers to any device thatcan function by utilizing semiconductor characteristics, andelectro-optical devices, semiconductor circuits, and electronic devicesare all semiconductor devices.

BACKGROUND ART

As typically seen in a liquid crystal display device, a transistorformed over a glass substrate or the like is manufactured usingamorphous silicon, polycrystalline silicon, or the like. A transistormanufactured using amorphous silicon can easily be formed over a largerglass substrate. However, a transistor manufactured using amorphoussilicon has a disadvantage of low field-effect mobility. Although atransistor manufactured using polycrystalline silicon has highfield-effect mobility, it has a disadvantage of not being suitable for alarger glass substrate.

In contrast to a transistor manufactured using silicon withdisadvantages as described above, a technique in which a transistor ismanufactured using an oxide semiconductor and applied to an electronicdevice or an optical device has attracted attention. For example, PatentDocument 1 discloses a technique in which a transistor is manufacturedusing an amorphous oxide containing In, Zn, Ga, Sn, and the like as anoxide semiconductor. In addition, Patent Document 2 discloses atechnique in which a transistor similar to that in Patent Document 1 ismanufactured and used as a switching element or the like in a pixel of adisplay device.

In addition, as for such an oxide semiconductor used in a transistor,there is also description as follows: an oxide semiconductor isinsensitive to impurities, there is no problem when a considerableamount of metal impurities are contained in a film, and soda-lime glasswhich contains a large amount of alkali metals such as sodium and isinexpensive can also be used (see Non-Patent Document 1).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2006-165529-   [Patent Document 2] Japanese Published Patent Application No.    2006-165528

Non-Patent Document

-   [Non-Patent Document 1] Kamiya, Nomura, and Hosono, “Carrier    Transport Properties and Electronic Structures of Amorphous Oxide    Semiconductors: The present status”, KOTAI BUTSURI (SOLID STATE    PHYSICS), 2009, Vol. 44, pp. 621-633

DISCLOSURE OF INVENTION

However, the electric conductivity of an oxide semiconductor film mightchange when, for example, a defect typified by an oxygen defect isgenerated in the oxide semiconductor film, or hydrogen which is to be asource for supplying a carrier enters the oxide semiconductor film in amanufacturing process of the oxide semiconductor film and asemiconductor device including the oxide semiconductor film. Such aphenomenon changes the electric characteristics of a transistorincluding the oxide semiconductor film, which leads to a reduction inreliability of the semiconductor device.

When such an oxide semiconductor film is irradiated with visible lightor ultraviolet light, the electric conductivity, particularly, of theoxide semiconductor film might change. Such a phenomenon also changesthe electric characteristics of the transistor including the oxidesemiconductor film, which leads to a reduction in reliability of thesemiconductor device.

In view of the above problems, it is an object to provide an oxidesemiconductor film which has more stable electric conductivity. Inaddition, it is an object to provide a highly reliable semiconductordevice which has stable electric characteristics by using the oxidesemiconductor film.

An embodiment of the disclosed invention provides an oxide semiconductorfilm including a crystalline region, and the crystalline region includesa crystal in which an a-b plane is substantially parallel with a surfaceof the film and a c-axis is substantially perpendicular to the surfaceof the film. That is, the crystalline region in the oxide semiconductorfilm has c-axis alignment. Note that the oxide semiconductor film is ina non-single-crystal state. In addition, the oxide semiconductor film isnot entirely in an amorphous state.

An embodiment of the disclosed invention provides an oxide semiconductorfilm including a crystalline region. The crystalline region includes acrystal in which an a-b plane is substantially parallel with a surfaceof the film and a c-axis is substantially perpendicular to the surfaceof the film. In measurement of electron diffraction intensity in whichirradiation with an electron beam is performed from a c-axis direction,the full width at half maximum of a peak in a region where the magnitudeof a scattering vector is greater than or equal to 3.3 nm⁻¹ and lessthan or equal to 4.1 nm⁻¹ and the full width at half maximum of a peakin a region where the magnitude of a scattering vector is greater thanor equal to 5.5 nm⁻¹ and less than or equal to 7.1 nm⁻¹ are each greaterthan or equal to 0.2 nm⁻¹.

In the above, the full width at half maximum of a peak in a region wherethe magnitude of a scattering vector is greater than or equal to 3.3nm⁻¹ and less than or equal to 4.1 nm⁻¹ is preferably greater than orequal to 0.4 nm⁻¹ and less than or equal to 0.7 nm⁻¹, and the full widthat half maximum of a peak in a region where the magnitude of ascattering vector is greater than or equal to 5.5 nm⁻¹ and less than orequal to 7.1 nm⁻¹ is preferably greater than or equal to 0.45 nm⁻¹ andless than or equal to 1.4 nm⁻¹. In addition, the spin density of a peakin a region where the g value is in the vicinity of 1.93 in ESRmeasurement is preferably lower than 1.3×10¹⁸ (spins/cm³). In addition,the oxide semiconductor film may include plural crystalline regions, anda-axis or b-axis directions of crystals in the plural crystallineregions may be different from each other. In addition, the oxidesemiconductor film preferably has a structure represented byInGaO₃(ZnO)_(m) (m is not a natural number).

In addition, another embodiment of the disclosed invention provides asemiconductor device including a first insulating film; an oxidesemiconductor film including a crystalline region, provided over thefirst insulating film; a source electrode and a drain electrode providedin contact with the oxide semiconductor film; a second insulating filmprovided over the oxide semiconductor film; and a gate electrodeprovided over the second insulating film. The crystalline regionincludes a crystal in which an a-b plane is substantially parallel witha surface of the film and a c-axis is substantially perpendicular to thesurface of the film.

In addition, another embodiment of the disclosed invention provides asemiconductor device including a gate electrode; a first insulating filmprovided over the gate electrode; an oxide semiconductor film includinga crystalline region, provided over the first insulating film; a sourceelectrode and a drain electrode provided in contact with the oxidesemiconductor film; and a second insulating film provided over the oxidesemiconductor film. The crystalline region includes a crystal in whichan a-b plane is substantially parallel with a surface of the film and ac-axis is substantially perpendicular to the surface of the film.

In the above, preferably, a first metal oxide film is provided betweenthe first insulating film and the oxide semiconductor film, the firstmetal oxide film includes gallium oxide, zinc oxide, and a crystallineregion, and the crystalline region includes a crystal in which an a-bplane is substantially parallel with a surface of the film and a c-axisis substantially perpendicular to the surface of the film. In addition,in the first metal oxide film, the amount of substance of zinc oxide ispreferably lower than 25% of the amount of substance of gallium oxide.In addition, preferably, a second metal oxide film is provided betweenthe oxide semiconductor film and the second insulating film, the secondmetal oxide film includes gallium oxide, zinc oxide, and a crystallineregion, and the crystalline region includes a crystal in which an a-bplane is substantially parallel with a surface of the film and a c-axisis substantially perpendicular to the surface of the film. In addition,in the second metal oxide film, the amount of substance of zinc oxide ispreferably lower than 25% of the amount of substance of gallium oxide.

In this specification and the like, “a plane A is substantially parallelwith a plane B” means “an angle between a normal of the plane A and anormal of the plane B is greater than or equal to 0° and less than orequal to 20°.” In addition, in this specification and the like, “a lineC is substantially perpendicular to the plane B” means “an angle betweenthe line C and the normal of the plane B is greater than or equal to 0°and less than or equal to 20°.”

An oxide semiconductor film including a crystalline region in which ana-b plane is substantially parallel with a surface of the film and ac-axis is substantially perpendicular to the surface of the film hasstable electric conductivity and is more electrically stable withrespect to irradiation with visible light, ultraviolet light, and thelike. By using such an oxide semiconductor film for a transistor, ahighly reliable semiconductor device having stable electriccharacteristics can be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional TEM image according to an embodiment of thepresent invention.

FIG. 2 illustrates a plan view and a cross-sectional view of a crystalstructure according to an embodiment of the present invention.

FIG. 3 is a graph showing a result of calculating the electron densityof states.

FIG. 4 is a band diagram of an amorphous oxide semiconductor includingan oxygen defect.

FIGS. 5A and 5B each illustrate a recombination model of an amorphousoxide semiconductor including an oxygen defect.

FIGS. 6A to 6E are cross-sectional views illustrating a manufacturingprocess of a semiconductor device according to an embodiment of thepresent invention.

FIGS. 7A and 7B are schematic views illustrating a sputtering apparatus.

FIGS. 8A and 8B are schematic diagrams illustrating a crystal structureof a seed crystal.

FIGS. 9A and 9B are cross-sectional views illustrating a manufacturingprocess of a semiconductor device according to an embodiment of thepresent invention.

FIGS. 10A to 10C are cross-sectional views each illustrating asemiconductor device according to an embodiment of the presentinvention.

FIGS. 11A to 11C are cross-sectional views each illustrating asemiconductor device according to an embodiment of the presentinvention.

FIG. 12 is a diagram illustrating a band structure of a semiconductordevice according to an embodiment of the present invention.

FIGS. 13A to 13E are cross-sectional TEM images according an example ofthe present invention.

FIGS. 14A to 14E are plane TEM images according an example of thepresent invention.

FIGS. 15A to 15E are electron diffraction patterns according to anexample of the present invention.

FIGS. 16A to 16E are plane TEM images and electron diffraction patternsaccording to an example of the present invention.

FIG. 17 is a graph showing electron diffraction intensity according toan example of the present invention.

FIG. 18 is a graph showing the full width at half maximum of a firstpeak in electron diffraction intensity according to an example of thepresent invention.

FIG. 19 is a graph showing the full width at half maximum of a secondpeak in electron diffraction intensity according to an example of thepresent invention.

FIG. 20 shows XRD spectra according to an example of the presentinvention.

FIGS. 21A and 21B each show an XRD spectrum according to an example ofthe present invention.

FIG. 22 is a graph showing results of ESR measurement according to anexample of the present invention.

FIG. 23 illustrates models of an oxygen defect used in quantum chemistrycalculation according to an example of the present invention.

FIG. 24 is a graph showing results of low-temperature PL measurementaccording to an example of the present invention.

FIG. 25 is a graph showing results of measurement of negative-biasstress photodegradation according to an example of the presentinvention.

FIGS. 26A and 26B are graphs each showing photoelectric current measuredby a photoresponse defect evaluation method according to an example ofthe present invention.

FIG. 27 shows a result of TDS analysis according to an example of thepresent invention.

FIGS. 28A and 28B each show results of SIMS analyses according to anexample of the present invention.

FIGS. 29A to 29C are a block diagram and equivalent circuit diagramsillustrating an embodiment of the present invention.

FIGS. 30A to 30D are external views each illustrating an electronicdevice according to an embodiment of the present invention.

FIG. 31 is a cross-sectional TEM image according to an embodiment of thepresent invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments and Example of the present invention will be described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the following description, and itwill be easily understood by those skilled in the art that modes anddetails thereof can be modified in various ways without departing fromthe spirit and the scope of the present invention. Therefore, thepresent invention should not be construed as being limited to thedescription in the following embodiments and example. Note that instructures of the present invention described hereinafter, the sameportions or portions having similar functions are denoted by the samereference numerals in different drawings, and description thereof is notrepeated.

Note that in each drawing described in this specification, the size, thelayer thickness, or the region of each component is exaggerated forclarity in some cases. Therefore, embodiments and an example of thepresent invention are not always limited to such scales.

In addition, terms such as “first”, “second”, and “third” in thisspecification are used in order to avoid confusion among components, andthe terms do not limit the components numerically. Therefore, forexample, the term “first” can be replaced with the term “second”,“third”, or the like as appropriate.

Embodiment 1

In this embodiment, an oxide semiconductor film will be described as anembodiment of the present invention with reference to FIG. 1, FIG. 2,FIG. 3, FIG. 4, and FIGS. 5A and 5B.

An oxide semiconductor film according to this embodiment includes acrystalline region. The crystalline region includes a crystal in whichan a-b plane is substantially parallel with a surface of the film and ac-axis is substantially perpendicular to the surface of the film. Thatis, the crystalline region included in the oxide semiconductor film hasc-axis alignment. When a cross section of the crystalline region isobserved, atoms arranged in a layered manner and stacked from asubstrate toward the surface of the film are observed, and the c-axis ofthe crystal is substantially perpendicular to the surface. Since theoxide semiconductor film includes the crystalline region with c-axisalignment as described above, the oxide semiconductor film is alsoreferred to as a c-axis aligned crystalline oxide semiconductor(CAAC-OS) film.

FIG. 1 is a cross-sectional TEM image of an oxide semiconductor filmincluding a crystalline region, which was actually manufactured. Acrystalline region 21 in which, as indicated by arrows in FIG. 1, atomsare arranged in a layered manner, that is, which has c-axis alignment,is observed in the oxide semiconductor film.

A crystalline region 22 is also observed in the oxide semiconductorfilm. The crystalline region 21 and the crystalline region 22 aresurrounded by an amorphous region in a three-dimensional manner.Although plural crystalline regions exist in the oxide semiconductorfilm, a crystal boundary is not observed in FIG. 1. A crystal boundaryis not observed in the entire oxide semiconductor film, either.

Although the crystalline region 21 and the crystalline region 22 areseparated from each other with the amorphous region providedtherebetween in FIG. 1, it appears that atoms arranged in a layeredmanner in the crystalline region 21 are stacked at substantially thesame intervals as in the crystalline region 22 and layers arecontinuously formed beyond the amorphous region.

In addition, although the crystalline region 21 and the crystallineregion 22 are about 3 nm to 7 nm in size in FIG. 1, the size of thecrystalline region formed in the oxide semiconductor film in thisembodiment can be about greater than or equal to 1 nm and less than orequal to 1000 nm. For example, as shown in FIG. 31, the size of thecrystalline region of the oxide semiconductor film can be greater thanor equal to several tens of nanometers.

In addition, it is preferable that when the crystalline region isobserved from a direction perpendicular to the surface of the film,atoms be arranged in a hexagonal lattice. With such a structure, thecrystalline region can easily have a hexagonal crystal structure havingthree-fold symmetry. Note that in this specification, a hexagonalcrystal structure is included in a hexagonal crystal family.Alternatively, a hexagonal crystal structure is included in trigonal andhexagonal crystal systems.

The oxide semiconductor film according to this embodiment may includeplural crystalline regions, and a-axis or b-axis directions of crystalsin the plural crystal regions may be different from each other. That is,the plural crystalline regions in the oxide semiconductor film accordingto this embodiment are crystallized along the c-axes but alignment alongthe a-b planes does not necessarily appear. However, it is preferablethat regions with different a-axis or b-axis directions be not incontact with each other so as not to form a crystal boundary at aninterface where the regions are in contact with each other. Therefore,the oxide semiconductor film preferably includes an amorphous regionsurrounding the crystalline region in a three-dimensional manner. Thatis, the oxide semiconductor film including a crystalline region is in anon-single-crystal state and not entirely in an amorphous state.

As the oxide semiconductor film, a four-component metal oxide such as anIn—Sn—Ga—Zn—O-based metal oxide, a three-component metal oxide such asan In—Ga—Zn—O-based metal oxide, an In—Sn—Zn—O-based metal oxide, anIn—Al—Zn—O-based metal oxide, a Sn—Ga—Zn—O-based metal oxide, anAl—Ga—Zn—O-based metal oxide, or a Sn—Al—Zn—O-based metal oxide, atwo-component metal oxide such as an In—Zn—O-based metal oxide or aSn—Zn—O-based metal oxide, or the like can be used.

Above all, an In—Ga—Zn—O-based metal oxide has an energy gap that is aswide as greater than or equal to 2 eV, preferably greater than or equalto 2.5 eV, more preferably greater than or equal to 3 eV in many cases;when a transistor is manufactured using the In—Ga—Zn—O-based metaloxide, the transistor can have sufficiently high resistance in an offstate and its off-state current can be sufficiently small. A crystallineregion in an In—Ga—Zn—O-based metal oxide mainly has a crystal structurewhich is not a hexagonal wurtzite structure in many cases and may have,for example, a YbFe₂O₄ structure, a Yb₂Fe₃O₇ structure, a modifiedstructure thereof, or the like (M. Nakamura, N. Kimizuka, and T. Mohri,“The Phase Relations in the In₂O₃—Ga₂ZnO₄—ZnO System at 1350° C.”, J.Solid State Chem., 1991, Vol. 93, pp. 298-315). Note that a layercontaining Yb is denoted by an A layer and a layer containing Fe isdenoted by a B layer, below. The YbFe₂O₄ structure is a repeatedstructure of ABB|ABB|ABB. As an example of a deformed structure of theYbFe₂O₄ structure, a repeated structure of ABBB|ABBB can be given.Further, the Yb₂Fe₃O₇ structure is a repeated structure ofABB|AB|ABB|AB. As an example of a deformed structure of the Yb₂Fe₃O₇structure, a repeated structure of ABBB|ABB|ABBB|ABB|ABBB|ABB| can begiven. In the case where the amount of ZnO is large in anIn—Ga—Zn—O-based metal oxide, it may have a wurtzite crystal structure.

A typical example of an In—Ga—Zn—O-based metal oxide is represented byInGaO₃(ZnO)_(m) (m>0). Here, as an example of an In—Ga—Zn—O-based metaloxide, a metal oxide having a composition ratio whereIn₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio], a metal oxide having a compositionratio where In₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio], or a metal oxide havinga composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:4 [molar ratio] can begiven. It is preferable that m be not a natural number. Note that theabove-described compositions are attributed to crystal structures andare just examples. As an example of an In—Ga—Zn—O-based metal oxide, ametal oxide having a composition ratio where In₂O₃:Ga₂O₃:ZnO=2:1:8[molar ratio], a metal oxide having a composition ratio whereIn₂O₃:Ga₂O₃:ZnO=3:1:4 [molar ratio], or a metal oxide having acomposition ratio where In₂O₃:Ga₂O₃:ZnO=2:1:6 [molar ratio] may also begiven.

FIG. 2 illustrates a crystal structure of In₂Ga₂ZnO₇ as an example of astructure of a crystalline region included in an oxide semiconductorfilm, which has the above structure. The crystal structure of In₂Ga₂ZnO₇in FIG. 2 is shown by a plan view parallel with an a-axis and a b-axisand a cross-sectional view parallel with a c-axis. The c-axis isperpendicular to the a-axis and the b-axis, and an angle between thea-axis and the b-axis is 120°. As for In₂Ga₂ZnO₇ in FIG. 2, a site 11which can be occupied by an In atom is illustrated in the plan view, andan In atom 12, a Ga atom 13, a Ga or Zn atom 14, and an O atom 15 areillustrated in the cross-sectional view.

As illustrated in the cross-sectional view of FIG. 2, In₂Ga₂ZnO₇ has astructure in which one Ga oxide layer between In oxide layers and twooxide layers, that is, one Ga oxide layer and one Zn oxide layer,between In oxide layers are alternatively stacked in the c-axisdirection. In addition, as illustrated in the plan view of FIG. 2,In₂Ga₂ZnO₇ has a hexagonal crystal structure having three-fold symmetry.

The oxide semiconductor film including a crystalline region described inthis embodiment preferably has crystallinity of a certain level. Inaddition, the oxide semiconductor film including a crystalline region isnot in a single crystal state. The oxide semiconductor film including acrystalline region has favorable crystallinity as compared to an oxidesemiconductor film which is entirely amorphous, and defects typified byoxygen defects or impurities such as hydrogen bonded to dangling bondsor the like are reduced. In particular, oxygen which is bonded to ametal atom in a crystal has higher bonding force than oxygen which isbonded to a metal atom in an amorphous portion and becomes less reactiveto an impurity such as hydrogen, so that generation of defects can bereduced.

For example, an oxide semiconductor film which is formed of anIn—Ga—Zn—O-based metal oxide and includes a crystalline region has suchcrystallinity that in measurement of electron diffraction intensity inwhich irradiation with an electron beam is performed from the c-axisdirection, the full width at half maximum of a peak in a region wherethe magnitude of a scattering vector is greater than or equal to 3.3nm⁻¹ and less than or equal to 4.1 nm⁻¹ and the full width at halfmaximum of a peak in a region where the magnitude of a scattering vectoris greater than or equal to 5.5 nm⁻¹ and less than or equal to 7.1 nm⁻¹are each greater than or equal to 0.2 nm⁻¹. Preferably, the full widthat half maximum of a peak in a region where the magnitude of ascattering vector is greater than or equal to 3.3 nm⁻¹ and less than orequal to 4.1 nm⁻¹ is greater than or equal to 0.4 nm⁻¹ and less than orequal to 0.7 nm⁻¹, and the full width at half maximum of a peak in aregion where the magnitude of a scattering vector is greater than orequal to 5.5 nm⁻¹ and less than or equal to 7.1 nm⁻¹ is greater than orequal to 0.45 nm⁻¹ and less than or equal to 1.4 nm⁻¹.

In the oxide semiconductor film including a crystalline region describedin this embodiment, defects typified by oxygen defects in the film arepreferably reduced as described above. Defects typified by oxygendefects function as sources for supplying carriers in the oxidesemiconductor film, which might change the electric conductivity of theoxide semiconductor film. Therefore, the oxide semiconductor filmincluding a crystalline region in which such defects are reduced hasstable electric conductivity and is more electrically stable withrespect to irradiation with visible light, ultraviolet light, and thelike.

By performing electron spin resonance (ESR) measurement on the oxidesemiconductor film including a crystalline region, the amount of loneelectrons in the film can be measured, and the amount of oxygen defectscan be estimated. For example, in the oxide semiconductor film which isformed of an In—Ga—Zn—O-based metal oxide and includes a crystallineregion, the spin density of a peak in a region where the g value is inthe vicinity of 1.93 in ESR measurement is lower than 1.3×10¹⁸(spins/cm³), preferably lower than or equal to 5×10¹⁷ (spins/cm³), morepreferably lower than or equal to 5×10¹⁶ (spins/cm³), much morepreferably 1×10¹⁶ (spins/cm³).

As described above, hydrogen or impurities containing hydrogen such aswater, a hydroxyl group, or a hydride in the oxide semiconductor filmincluding a crystalline region are preferably reduced, and theconcentration of hydrogen in the oxide semiconductor film including acrystalline region is preferably lower than or equal to 1×10¹⁹atoms/cm³. Hydrogen bonded to a dangling bond or the like, or animpurity containing hydrogen such as water, a hydroxyl group, or ahydride functions as a source for supplying a carrier in the oxidesemiconductor film, which might change the electric conductivity of theoxide semiconductor film. In addition, hydrogen contained in the oxidesemiconductor film reacts with oxygen bonded to a metal atom to bewater, and a defect is formed in a lattice from which oxygen is detached(or a portion from which oxygen is detached). Therefore, the oxidesemiconductor film including a crystalline region in which such defectsare reduced has stable electric conductivity and is more electricallystable with respect to irradiation with visible light, ultravioletlight, and the like.

Note that impurities such as an alkali metal in the oxide semiconductorfilm including a crystalline region are preferably reduced. For example,in the oxide semiconductor film including a crystalline region, theconcentration of lithium is lower than or equal to 5×10¹⁵ cm⁻³,preferably lower than or equal to 1×10¹⁵ cm⁻³; the concentration ofsodium is lower than or equal to 5×10¹⁶ cm⁻³, preferably lower than orequal to 1×10¹⁶ cm⁻³, more preferably lower than or equal to 1×10¹⁵cm⁻³; and the concentration of potassium is lower than or equal to5×10¹⁵ cm⁻³, preferably lower than or equal to 1×10¹⁵ cm⁻³.

An alkali metal and an alkaline earth metal are adverse impurities forthe oxide semiconductor film including a crystalline region and arepreferably contained as little as possible. In particular, when theoxide semiconductor film is used for a transistor, sodium that is one ofalkali metals diffuses into an insulating film in contact with the oxidesemiconductor film including a crystalline region and thus a carrier ispossibly supplied to the oxide semiconductor film. In addition, sodiumcuts a bond between a metal and oxygen or enters the bond in the oxidesemiconductor film including a crystalline region. As a result,transistor characteristics deteriorate (e.g., the transistor becomesnormally-on (the shift of a threshold voltage to a negative side) or themobility is decreased). In addition, this also causes a variation in thecharacteristics.

Such a problem is significant especially in the case where theconcentration of hydrogen in the oxide semiconductor film including acrystalline region is extremely low. Therefore, it is highly preferableto set the concentration of an alkali metal in the above range in thecase where the concentration of hydrogen in the oxide semiconductor filmincluding a crystalline region is lower than or equal to 5×10¹⁹ cm⁻³,particularly lower than or equal to 5×10¹⁸ cm⁻³. Accordingly, it ispreferable that impurities in the oxide semiconductor film including acrystalline region be extremely reduced, the concentration of an alkalimetal be lower than or equal to 5×10¹⁶ atoms/cm³, and the concentrationof hydrogen be lower than or equal to 5×10¹⁹ atoms/cm³.

As described above, the oxide semiconductor film including a crystallineregion has favorable crystallinity as compared to an oxide semiconductorfilm which is entirely amorphous, and defects typified by oxygen defectsor impurities such as hydrogen bonded to dangling bonds or the like arereduced. A defect typified by an oxygen defect, hydrogen bonded to adangling bond or the like, or the like functions as a source forsupplying a carrier in the oxide semiconductor film, which might changethe electric conductivity of the oxide semiconductor film. Therefore,the oxide semiconductor film including a crystalline region in whichsuch defects are reduced has stable electric conductivity and is moreelectrically stable with respect to irradiation with visible light,ultraviolet light, and the like. By using such an oxide semiconductorfilm including a crystalline region for a transistor, a highly reliablesemiconductor device having stable electric characteristics can beprovided.

Next, a result of examining how the electric conductivity of the oxidesemiconductor film is influenced by an oxygen defect in the oxidesemiconductor film, using first-principles calculation based on densityfunctional theory, will be described. Note that CASTEP, software offirst-principles calculation produced by Accelrys Software Inc., wasused for the first-principles calculation. In addition, GGA-PBE was usedfor a functional, and an ultrasoft type was used for pseudopotential.

In this calculation, as a model of the oxide semiconductor film, a modelin which one oxygen atom is detached from amorphous InGaZnO₄ and a void(an oxygen defect) is left in that region was used. The model includes12 In atoms, 12 Ga atoms, 12 Zn atoms, and 47 O atoms. InGaZnO₄ havingsuch a structure was subjected to structure optimization in terms ofatomic positions, and the electron density of states was calculated. Atthis time, cut-off energy was set to 300 eV.

A result of calculating the electron density of states is shown in FIG.3. In FIG. 3, the vertical axis indicates the density of states (DOS)[states/eV] and the horizontal axis indicates energy [eV]. The Fermienergy is at the origin of the energy, which is spotted on thehorizontal axis. As shown in FIG. 3, the top of a valence band ofInGaZnO₄ is −0.74 eV and the bottom of a conduction band thereof is 0.56eV. The value of the band gap is very small as compared to 3.15 eV whichis an experimental value of the band gap of InGaZnO₄. However, it iswell known that the band gap is smaller than the experimental value inthe first-principles calculation based on the density functional theory,and the value of the band gap does not indicate that this calculation isimproper.

FIG. 3 shows that amorphous InGaZnO₄ including an oxygen defect has adeep level in the band gap. That is, it is estimated that in the bandstructure of an amorphous oxide semiconductor including an oxygendefect, a trap level due to an oxygen defect exists as a deep trap levelin the band gap.

FIG. 4 shows a band diagram of an amorphous oxide semiconductorincluding an oxygen defect, based on the above consideration. In FIG. 4,the vertical axis represents energy, the horizontal axis represents DOS,and the energy gap from an energy level Ev at the top of a valence band(VB) to an energy level Ec at the bottom of a conduction band (CB) isset to 3.15 eV, which is based on the experimental value.

In the band diagram of FIG. 4, a tail state due to an amorphous portionin the oxide semiconductor exists in the vicinity of the bottom of theconduction band. Further, a hydrogen donor level due to hydrogen bondedto a dangling bond or the like in the amorphous oxide semiconductor isassumed to exist at a shallow energy level that is about 0.1 eV deepfrom the bottom of the conduction band. A trap level due to an oxygendefect in the amorphous oxide semiconductor exists at a deep energylevel that is about 1.8 eV deep from the bottom of the conduction band.Note that the value of the energy level of the trap level due to anoxygen defect will be described in detail in an example described later.

FIGS. 5A and 5B each illustrate a recombination model of an electron anda hole in the band structure in the case of an amorphous oxidesemiconductor having such an energy level in the band gap as describedabove, which is based on the above consideration, particularly, a deeptrap level due to an oxygen defect.

FIG. 5A illustrates a recombination model in the case where enough holesexist in a valence band and enough electrons exist in a conduction band.When the amorphous oxide semiconductor film is irradiated with light togenerate enough electron-hole pairs, the band structure of the oxidesemiconductor has a recombination model as illustrated in FIG. 5A. Inthis recombination model, a hole is generated not only at the top of thevalence band but also at a deep trap level due to an oxygen defect.

In the recombination model illustrated in FIG. 5A, it is assumed thattwo kinds of recombination processes occur in parallel. One of therecombination processes is a band-to-band recombination process in whichan electron in the conduction band and a hole in the valence band aredirectly recombined with each other. The other of the recombinationprocesses is a recombination process in which an electron in theconduction band is recombined with a hole at a trap level due to anoxygen defect. The band-to-band recombination occurs more frequentlythan the recombination with the trap level due to an oxygen defect; whenthe number of holes in the valence band becomes sufficiently small, theband-to-band recombination finishes earlier than the recombination withthe trap level. Thus, the recombination model illustrated in FIG. 5A hasonly the recombination process in which an electron at the bottom of theconduction band is recombined with a hole at a trap level due to anoxygen defect, and shifts to a recombination model illustrated in FIG.5B.

Sufficient light irradiation may be performed on the oxide semiconductorso that enough holes can exist in the valence band and enough electronscan exist in the conduction band; by stopping the light irradiationafter that, an electron and a hole are recombined with each other as inthe recombination model illustrated in FIG. 5A. Current which flowsthrough the oxide semiconductor at that time is also calledphotoelectric current. Time required for attenuation of thephotoelectric current (relaxation time) at this time is shorter thanrelaxation time of photoelectric current in the recombination modelillustrated in FIG. 5B. An example described later may be referred tofor details of the above.

The recombination model illustrated in FIG. 5B is obtained after therecombination model illustrated in FIG. 5A proceeds and the number ofholes in the valence band is sufficiently reduced. Since in therecombination model illustrated in FIG. 5B, almost only therecombination process with the trap level due to an oxygen defectoccurs, the number of electrons in the conduction band is more graduallyreduced than in the recombination model illustrated in FIG. 5A. It isneedless to say that electrons in the conduction band contribute toelectric conduction in the oxide semiconductor film during therecombination process. Therefore, in the recombination model illustratedin FIG. 5B, the relaxation time of the photoelectric current is longerthan in the recombination model illustrated in FIG. 5A in which theband-to-band recombination mainly occurs. Note that an example describedlater may be referred to for details of the above.

As described above, the amorphous oxide semiconductor having a deep traplevel due to an oxygen defect has two kinds of recombination models forelectron-hole pairs in the band structure, and the relaxation time ofthe photoelectric current can also be classified into two kinds. Slowrelaxation of the photoelectric current in the recombination modelillustrated in FIG. 5B might form fixed electric charge in the oxidesemiconductor film or at an interface between the oxide semiconductorfilm and the adjacent film when negative bias is applied to a gateelectrode in light irradiation in a transistor or the like in which theoxide semiconductor film is used. Accordingly, it is assumed that anoxygen defect in the oxide semiconductor film adversely affects theelectric conductivity of the oxide semiconductor film.

However, the oxide semiconductor film including a crystalline regionaccording to an embodiment of the present invention has favorablecrystallinity as compared to an oxide semiconductor film which isentirely amorphous, and defects typified by oxygen defects are reduced.Therefore, the oxide semiconductor film including a crystalline regionaccording to an embodiment of the present invention has stable electricconductivity and is more electrically stable with respect to irradiationwith visible light, ultraviolet light, and the like. By using such anoxide semiconductor film including a crystalline region for atransistor, a highly reliable semiconductor device having stableelectric characteristics can be provided.

The structures and the like described in this embodiment can be combinedas appropriate with any of the structures, methods, and the likedescribed in other embodiments.

Embodiment 2

In this embodiment, a transistor in which the oxide semiconductor filmincluding a crystalline region described in Embodiment 1 is used and amethod for manufacturing the transistor will be described with referenceto FIGS. 6A to 6E, FIGS. 7A and 7B, FIGS. 8A and 8B, FIGS. 9A and 9B,and FIGS. 10A to 10C. FIGS. 6A to 6E are cross-sectional viewsillustrating a manufacturing process of a top-gate transistor 120 whichis an embodiment of the structure of a semiconductor device.

First, before an oxide semiconductor film including a crystalline regionis formed, a base insulating film 53 is preferably formed over asubstrate 51 as illustrated in FIG. 6A.

The substrate 51 should have at least heat resistance high enough towithstand heat treatment performed later. When a glass substrate is usedas the substrate 51, a glass substrate whose strain point is higher thanor equal to 730° C. is preferably used. As a glass substrate, asubstrate formed of a glass material such as aluminosilicate glass,aluminoborosilicate glass, or barium borosilicate glass is used, forexample. Note that a glass substrate containing BaO and B₂O₃ so that theamount of BaO is larger than that of B₂O₃ is preferably used. In thecase where the substrate 51 is mother glass, the substrate may have anyof the following sizes: the first generation (320 mm×400 mm), the secondgeneration (400 mm×500 mm), the third generation (550 mm×650 mm), thefourth generation (680 mm×880 mm or 730 mm×920 mm), the fifth generation(1000 mm×1200 mm or 1100 mm×1250 mm), the sixth generation (1500 mm×1800mm), the seventh generation (1900 mm×2200 mm), the eighth generation(2160 mm×2460 mm), the ninth generation (2400 mm×2800 mm or 2450 mm×3050mm), the tenth generation (2950 mm×3400 mm), and the like. The motherglass drastically shrinks when the treatment temperature is high and thetreatment time is long. Thus, in the case where mass production isperformed with the use of the mother glass, a preferable heatingtemperature in the manufacturing process is lower than or equal to 600°C., preferably lower than or equal to 450° C.

Instead of the glass substrate, a substrate formed of an insulator, suchas a ceramic substrate, a quartz substrate, or a sapphire substrate canbe used. Alternatively, crystallized glass or the like may be used.Further alternatively, a substrate obtained by forming an insulatinglayer over a surface of a semiconductor substrate such as a siliconwafer or a surface of a conductive substrate formed of a metal materialcan be used.

The base insulating film 53 is preferably formed using an oxideinsulating film from which part of contained oxygen is released by heattreatment. The oxide insulating film from which part of contained oxygenis released by heat treatment is preferably an oxide insulating filmwhich contains oxygen at a proportion exceeding the stoichiometricproportion. By using the oxide insulating film from which part ofcontained oxygen is released by heat treatment as the base insulatingfilm 53, oxygen can be diffused into the oxide semiconductor film byheat treatment in a later step. Typical examples of the oxide insulatingfilm from which part of contained oxygen is released by heat treatmentinclude films of silicon oxide, silicon oxynitride, aluminum oxide,aluminum oxynitride, gallium oxide, hafnium oxide, yttrium oxide, andthe like.

The thickness of the base insulating film 53 is greater than or equal to50 nm, preferably greater than or equal to 200 nm and less than or equalto 500 nm. With the base insulating film 53 being thick, the amount ofoxygen released from the base insulating film 53 can be increased, andthereby defects at the interface between the base insulating film 53 andthe oxide semiconductor film to be formed later can be reduced.

The base insulating film 53 is formed by a sputtering method, a CVDmethod or the like. The oxide insulating film from which part ofcontained oxygen is released by heat treatment can easily be formed by asputtering method. When the oxide insulating film from which part ofcontained oxygen is released by heat treatment is formed by a sputteringmethod, the amount of oxygen contained in a deposition gas is preferablylarge, and oxygen, a mixed gas of oxygen and a rare gas, or the like canbe used. Typically, the concentration of oxygen in the deposition gas ispreferably higher than or equal to 6% and lower than or equal to 100%.

The base insulating film 53 is not necessarily formed using an oxideinsulating film from which part of contained oxygen is released by heattreatment, and may be formed using a nitride insulating film formed ofsilicon nitride, silicon nitride oxide, aluminum nitride, or the like.In addition, the base insulating film 53 may have a layered structureincluding the oxide insulating film and the nitride insulating film; insuch a case, the oxide insulating film is preferably provided over thenitride insulating film. By using the nitride insulating film as thebase insulating film 53, entry of an alkali metal or the like into theoxide semiconductor film can be prevented when a glass substratecontaining an impurity such as an alkali metal is used. Since an alkalimetal such as lithium, sodium, or potassium is an adverse impurity forthe oxide semiconductor, the contained amount of such an alkali metal inthe oxide semiconductor film is preferably small. The nitride insulatingfilm can be formed by a CVD method, a sputtering method, or the like.

Next, as illustrated in FIG. 6B, over the base insulating film 53, anoxide semiconductor film 55 including a crystalline region is formed toa thickness of greater than or equal to 30 nm and less than or equal to50 μm by a sputtering method with the use of a sputtering apparatus.

Here, a treatment chamber of the sputtering apparatus is described withreference to FIG. 7A. An evacuation unit 33 and a gas supply unit 35 areconnected to a treatment chamber 31. In the treatment chamber 31, asubstrate support 40 and a target 41 are provided. The target 41 isconnected to a power supply device 37.

The treatment chamber 31 is connected to GND. When the leakage rate ofthe treatment chamber 31 is lower than or equal to 1×10⁻¹⁰ Pa·m³/sec.,entry of an impurity into a film to be formed by a sputtering method canbe decreased.

In order to decrease the leakage rate, internal leakage as well asexternal leakage needs to be reduced. The external leakage refers toinflow of a gas from the outside of a vacuum system through a minutehole, a sealing defect, or the like. The internal leakage is due toleakage through a partition, such as a valve, in a vacuum system or dueto a released gas from an internal member. Measures need to be takenfrom both aspects of external leakage and internal leakage in order thatthe leakage rate be lower than or equal to 1×10⁻¹⁰ Pa·m³/sec.

In order to decrease external leakage, an open/close portion of thetreatment chamber is preferably sealed with a metal gasket. For themetal gasket, a metal material covered with iron fluoride, aluminumoxide, or chromium oxide is preferably used. The metal gasket realizeshigher adhesion than an O-ring, and can reduce external leakage.Further, with the use of a metal material covered with iron fluoride,aluminum oxide, chromium oxide, or the like which is in the passivestate, a released gas containing hydrogen from the metal gasket issuppressed, so that internal leakage can also be reduced.

As a member for forming the inner wall of the treatment chamber 31,aluminum, chromium, titanium, zirconium, nickel, or vanadium, from whicha gas containing hydrogen is released at a smaller amount, is used. Analloy material containing iron, chromium, nickel, or the like coveredwith the above-mentioned material may also be used. The alloy materialcontaining iron, chromium, nickel, or the like is rigid, resistant toheat, and suitable for processing. Here, when surface unevenness of themember is decreased by polishing or the like to reduce the surface area,the released gas can be reduced. Alternatively, the above-mentionedmember of the sputtering apparatus may be covered with iron fluoride,aluminum oxide, chromium oxide, or the like which is in the passivestate.

A member provided for the inner wall of the treatment chamber 31 ispreferably formed with only a metal material as much as possible. Forexample, in the case where a viewing window formed with quartz or thelike is provided, a surface is preferably covered thinly with ironfluoride, aluminum oxide, chromium oxide, or the like which is in thepassive state so as to suppress the released gas.

Furthermore, it is preferable to provide a refiner for a sputtering gasjust in front of the treatment chamber 31. At this time, the length of apipe between the refiner and the treatment chamber is less than or equalto 5 m, preferably less than or equal to 1 m. When the length of thepipe is less than or equal to 5 m or less than or equal to 1 m, theinfluence of a released gas from the pipe can be reduced owing to areduction in length of the pipe.

A pipe through which a sputtering gas flows from a cylinder to thetreatment chamber 31 is preferably a metal pipe whose inside is coveredwith iron fluoride, aluminum oxide, chromium oxide, or the like which isin the passive state. With the above-mentioned pipe, the amount of areleased gas containing hydrogen is small and entry of impurities intothe deposition gas can be reduced as compared to a SUS316L-EP pipe, forexample. Further, a high-performance ultra-compact metal gasket joint (aUPG joint) is preferably used as a joint of the pipe. In addition, astructure in which all the materials of the pipe are metal materials ispreferable, because the influence of the released gas and externalleakage can be reduced as compared to a structure in which a resin orthe like is used.

Evacuation of the treatment chamber 31 is preferably performed withappropriate combination of a rough vacuum pump such as a dry pump, and ahigh vacuum pump such as a sputter ion pump, a turbo molecular pump, ora cryopump. A turbo molecular pump has an outstanding capability inremoving a large-sized molecule, whereas it has a low capability inremoving hydrogen or water. Hence, combination with a cryopump having ahigh capability in removing water and a sputter ion pump having a highcapability in removing hydrogen is effective.

An adsorbate on the inner wall of the treatment chamber 31 does notaffect the pressure in the treatment chamber because it is adsorbed onthe inner wall, but the adsorbate leads to release of a gas at the timeof the evacuation of the treatment chamber. Therefore, although theleakage rate and the evacuation rate do not have a correlation, it isimportant that the adsorbate in the treatment chamber be detached asmuch as possible and evacuation be performed in advance with the use ofa pump having high evacuation capability. Note that the treatmentchamber may be subjected to baking for promotion of detachment of theadsorbate. By the baking, the rate of detachment of the adsorbate can beincreased about tenfold. The baking may be performed at a temperature ofhigher than or equal to 100° C. and lower than or equal to 450° C. Atthis time, when the adsorbate is removed while an inert gas isintroduced, the rate of detachment of water or the like, which isdifficult to detach only by evacuation, can be further increased.

The evacuation unit 33 can remove an impurity from the treatment chamber31 and control the pressure in the treatment chamber 31. An entrapmentvacuum pump is preferably used as the evacuation unit 33. For example, acryopump, an ion pump, or a titanium sublimation pump is preferablyused. With the use of the above entrapment vacuum pump, the amount ofhydrogen contained in the oxide semiconductor film can be reduced.

Note that hydrogen contained in the oxide semiconductor film may be ahydrogen molecule, water, a hydroxyl group, or a hydride in some cases,in addition to a hydrogen atom.

The gas supply unit 35 is for supplying a gas with which a target issputtered into the treatment chamber 31. The gas supply unit 35 includesa cylinder filled with a gas, a pressure adjusting valve, a stop valve,a mass flow controller, and the like. Providing a refiner for the gassupply unit 35 makes it possible to reduce impurities contained in a gasintroduced into the treatment chamber 31. As the gas with which a targetis sputtered, a rare gas such as helium, neon, argon, xenon, or kryptonis used. Alternatively, a mixed gas of oxygen and one of the above raregases can be used.

As the power supply device 37, an RF power supply device, an AC powersupply device, a DC power supply device, or the like can be used asappropriate. When a magnet is provided inside or outside a targetsupport for supporting the target, which is not illustrated,high-density plasma can be confined in the periphery of the target, sothat improvement in deposition rate and a reduction in plasma damage onthe substrate can be achieved. This method is referred to as a magnetronsputtering method. Moreover, when the magnet can be rotated in amagnetron sputtering method, non-uniformity of a magnetic field can bereduced, so that efficiency of use of the target is increased and avariation in film quality in the substrate plane can be reduced.

The substrate support 40 is connected to GND. The substrate support 40is provided with a heater. As a heater, a device for heating an objectby heat conduction or heat radiation from a heating element such as aresistance heating element can be used.

As the target 41, a metal oxide target containing zinc is preferablyused. As a typical example of the target 41, a four-component metaloxide such as an In—Sn—Ga—Zn—O-based metal oxide, a three-componentmetal oxide such as an In—Ga—Zn—O-based metal oxide, an In—Sn—Zn—O-basedmetal oxide, an In—Al—Zn—O-based metal oxide, a Sn—Ga—Zn—O-based metaloxide, an Al—Ga—Zn—O-based metal oxide, or a Sn—Al—Zn—O-based metaloxide, a two-component metal oxide such as an In—Zn—O-based metal oxideor a Sn—Zn—O-based metal oxide can be used.

An example of the target 41 is a metal oxide target containing In, Ga,and Zn at a composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio].Alternatively, a target having a composition ratio whereIn₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio], a target having a composition ratiowhere In₂O₃:Ga₂O₃:ZnO=1:1:4 [molar ratio], or a target having acomposition ratio where In₂O₃:Ga₂O₃:ZnO=2:1:8 [molar ratio] can be used.

The distance between the target 41 and the substrate 51 (the T-Sdistance) is preferably set to a distance which enables an atom whoseatomic weight is light to preferentially reach the base insulating film53 over the substrate 51.

As illustrated in FIG. 7A, the substrate 51 over which the baseinsulating film 53 is formed is placed on the substrate support 40 inthe treatment chamber 31 of the sputtering apparatus. Next, a gas forsputtering the target 41 is introduced from the gas supply unit 35 intothe treatment chamber 31. The purity of the target 41 is higher than orequal to 99.9%, preferably higher than or equal to 99.99%. Then, poweris supplied to the power supply device 37 connected to the target 41. Asa result, with the use of an ion 43 and an electron in the sputteringgas introduced from the gas supply unit 35 into the treatment chamber31, the target 41 is sputtered.

Here, the distance between the target 41 and the substrate 51 is set toa distance which enables an atom whose atomic weight is light topreferentially reach the base insulating film 53 over the substrate 51,whereby among atoms contained in the target 41, an atom 45 whose atomicweight is light can more preferentially move to the substrate side thanan atom 47 whose atomic weight is heavy as illustrated in FIG. 7B.

In the target 41, zinc has a lighter atomic weight than indium or thelike. Thus, zinc is preferentially deposited on the base insulating film53. Further, an atmosphere for forming a film contains oxygen, and thesubstrate support 40 is provided with a heater for heating the substrateand the deposited film during deposition. Thus, zinc deposited on thebase insulating film 53 is oxidized, so that a seed crystal 55 a with ahexagonal crystal structure containing zinc, typically, a seed crystalcontaining zinc oxide with a hexagonal crystal structure is formed. Inthe case where the target 41 includes an atom of aluminum or the likewith lighter atomic weight than zinc, the atom of aluminum or the likewith lighter atomic weight than zinc, as well as zinc, is preferentiallydeposited on the base insulating film 53.

The seed crystal 55 a includes a crystal containing zinc with ahexagonal wurtzite crystal structure which has a bond with a hexagonallattice in an a-b plane and in which the a-b plane is substantiallyparallel with a surface of the film and a c-axis is substantiallyperpendicular to the surface of the film. The crystal containing zincwith a hexagonal crystal structure which has a bond with a hexagonallattice in the a-b plane and in which the a-b plane is substantiallyparallel with the surface of the film and the c-axis is substantiallyperpendicular to the surface of the film will be described withreference to FIGS. 8A and 8B. As a typical example of the crystalcontaining zinc with a hexagonal crystal structure, zinc oxide isdescribed. A black sphere represents zinc, and a white sphere representsoxygen. FIG. 8A is a schematic diagram of zinc oxide with a hexagonalcrystal structure in the a-b plane, and FIG. 8B is a schematic diagramof zinc oxide with a hexagonal crystal structure in which thelongitudinal direction of the drawing is the c-axis direction. Asillustrated in FIG. 8A, in a plan top surface of the a-b plane, zinc andoxygen are bonded to form a hexagonal shape. As illustrated in FIG. 8B,layers in each of which zinc and oxygen are bonded to form a hexagonallattice are stacked, and the c-axis direction is perpendicular to thea-b plane. The seed crystal 55 a includes, in the c-axis direction, atleast one atomic layer including a bond with a hexagonal lattice in thea-b plane.

The target 41 is continuously sputtered with the use of a sputteringgas, whereby atoms included in the target are deposited on the seedcrystal 55 a. At this time, crystal growth is caused with the use of theseed crystal 55 a as a nucleus, so that an oxide semiconductor film 55 bincluding a crystalline region with a hexagonal crystal structure can beformed on the seed crystal 55 a. Note that since the substrate 51 isheated by the heater of the substrate support 40, crystal growth of theatoms deposited on the surface progresses with the use of the seedcrystal 55 a as a nucleus while the atoms are oxidized.

In formation of the oxide semiconductor film 55 b, crystal growth of anatom with heavy atomic weight at the surface of the target 41 and anatom with light atomic weight sputtered after formation of the seedcrystal 55 a is caused with the use of the seed crystal 55 a as anucleus while the atoms are oxidized. Thus, like the seed crystal 55 a,the oxide semiconductor film 55 b has a crystalline region with ahexagonal crystal structure which includes a bond with a hexagonallattice in the a-b plane and in which the a-b plane is substantiallyparallel with the surface of the film and the c-axis is substantiallyperpendicular to the surface of the film. That is, the oxidesemiconductor film 55 including the seed crystal 55 a and the oxidesemiconductor film 55 b has a crystalline region with a hexagonalcrystal structure, which includes a bond with a hexagonal lattice in thea-b plane parallel with a surface of the base insulating film 53 and inwhich the c-axis is substantially perpendicular to the surface of thefilm. That is, the crystalline region with a hexagonal crystal structureincluded in the oxide semiconductor film 55 has c-axis alignment. Notethat in FIG. 6B, the interface between the seed crystal 55 a and theoxide semiconductor film 55 b is denoted by a dotted line fordescription of a stack of the oxide semiconductor films; however, theinterface is actually not distinct and is illustrated for easyunderstanding.

The temperature of the substrate heated by the heater is higher than200° C. and lower than or equal to 400° C., preferably higher than orequal to 250° C. and lower than or equal to 350° C. By performingdeposition while the substrate is heated at a temperature of higher than200° C. and lower than or equal to 400° C., preferably higher than orequal to 250° C. and lower than or equal to 350° C., heat treatment canbe performed at the same time as the deposition, so that the oxidesemiconductor film including a region having favorable crystallinity canbe formed. Note that the temperature of the surface where a film isformed in sputtering is higher than or equal to 250° C. and lower thanor equal to the upper limit of the heat treatment temperature of thesubstrate.

As a sputtering gas, a rare gas (typically argon), oxygen, or a mixedgas of a rare gas and oxygen is used as appropriate. It is preferablethat a high-purity gas from which impurities such as hydrogen, water, ahydroxyl group, or a hydride are removed be used as a sputtering gas.

When the pressure of the treatment chamber including the substratesupport 40 and the target 41 is set to lower than or equal to 0.4 Pa,impurities such an alkali metal or hydrogen entering a surface of theoxide semiconductor film including a crystalline region or the insidethereof can be reduced.

Moreover, when the leakage rate of the treatment chamber of thesputtering apparatus is set to lower than or equal to 1×10⁻¹⁰Pa·m³/sec., entry of impurities such as an alkali metal, hydrogen,water, a hydroxyl group, or a hydride into the oxide semiconductor filmincluding a crystalline region which is being formed by a sputteringmethod can be reduced. Further, with the use of an entrapment vacuumpump as an evacuation system, counter flow of impurities such as analkali metal, hydrogen, water, a hydroxyl group, or a hydride from theevacuation system can be reduced.

When the purity of the target 41 is set to higher than or equal to99.99%, an alkali metal, hydrogen, water, a hydroxyl group, a hydride,or the like entering the oxide semiconductor film including acrystalline region can be reduced. With the use of the target asdescribed above, in the oxide semiconductor film 55, the concentrationof lithium can be lower than or equal to 5×10¹⁵ atoms/cm³, preferablylower than or equal to 1×10¹⁵ atoms/cm³, the concentration of sodium canbe lower than or equal to 5×10¹⁶ atoms/cm³, preferably lower than orequal to 1×10¹⁶ atoms/cm³, more preferably lower than or equal to 1×10¹⁵atoms/cm³, and the concentration of potassium can be lower than or equalto 5×10¹⁵ atoms/cm³, preferably lower than or equal to 1×10¹⁵ atoms/cm³.

In the above method for forming the oxide semiconductor film, in onesputtering step, by utilizing a difference in atomic weight of atomscontained in the target, zinc with light atomic weight is preferentiallydeposited on the oxide insulating film to form a seed crystal, and thenindium or the like with heavy atomic weight is deposited on the seedcrystal while crystal growth is carried out. Thus, the oxidesemiconductor film including a crystalline region can be formed withoutperforming a plurality of steps.

In the above method for forming the oxide semiconductor film 55, by asputtering method, the seed crystal 55 a and the oxide semiconductorfilm 55 b are formed and crystallized at the same time; however, theoxide semiconductor film according to this embodiment is not necessarilyformed in this manner. For example, formation and crystallization of theseed crystal and the oxide semiconductor film may be performed inseparate steps.

A method in which formation and crystallization of the seed crystal andthe oxide semiconductor film are performed in separate steps isdescribed below with reference to FIGS. 9A and 9B. In thisspecification, the method for forming the oxide semiconductor filmincluding a crystalline region as described below is referred to as a“two-step method” in some cases. The oxide semiconductor film includinga crystalline region which is shown in the cross-sectional TEM image inFIG. 1 is formed by the two-step method.

First, a first oxide semiconductor film having a thickness of greaterthan or equal to 1 nm and less than or equal to 10 nm is formed over thebase insulating film 53. The first oxide semiconductor film is formed bya sputtering method, and the substrate temperature in deposition by asputtering method is preferably set to higher than or equal to 200° C.and lower than or equal to 400° C. The other film formation conditionsare similar to those of the above method for forming the oxidesemiconductor film.

Next, first heat treatment is performed under a condition where theatmosphere of a chamber in which the substrate is set is an atmosphereof nitrogen or dry air. The temperature of the first heat treatment ishigher than or equal to 400° C. and lower than or equal to 750° C.Through the first heat treatment, the first oxide semiconductor film iscrystallized, so that a seed crystal 56 a is formed (see FIG. 9A).

Although it depends on the temperature of the first heat treatment, thefirst heat treatment causes crystallization from a film surface and acrystal grows from the film surface toward the inside of the film, sothat a c-axis aligned crystal is obtained. By the first heat treatment,a large amount of zinc and oxygen gather to the film surface, and one ormore layers of a graphene-type two-dimensional crystal including zincand oxygen and having a hexagonal shape on the upper plane are formed atthe outermost surface; the layer(s) at the outermost surface grow in thethickness direction to form a stack of layers. By increasing thetemperature of the heat treatment, crystal growth proceeds from thesurface to the inside and further from the inside to the bottom.

In addition, by using an oxide insulating film from which part ofcontained oxygen is released by heat treatment as the base insulatingfilm 53, oxygen in the base insulating film 53 can be diffused into theinterface between the base insulating film 53 and the seed crystal 56 aor in the vicinity thereof (±5 nm from the interface) by the first heattreatment, whereby oxygen defects in the seed crystal 56 a can bereduced.

Next, a second oxide semiconductor film having a thickness of greaterthan 10 nm is formed over the seed crystal 56 a. The second oxidesemiconductor film is formed by a sputtering method, and the substratetemperature in deposition is set to higher than or equal to 200° C. andlower than or equal to 400° C. The other film formation conditions aresimilar to those of the above method for forming the oxide semiconductorfilm.

Next, second heat treatment is performed under a condition where theatmosphere of a chamber in which the substrate is set is an atmosphereof nitrogen or dry air. The temperature of the second heat treatment ishigher than or equal to 400° C. and lower than or equal to 750° C.Through the second heat treatment, the second oxide semiconductor filmis crystallized, so that an oxide semiconductor film 56 b is formed (seeFIG. 9B). The second heat treatment is performed in a nitrogenatmosphere, an oxygen atmosphere, or a mixed atmosphere of nitrogen andoxygen, whereby the density of the oxide semiconductor film 56 b isincreased and the number of defects therein is reduced. By the secondheat treatment, crystal growth proceeds in the thickness direction withthe use of the seed crystal 56 a as a nucleus, that is, crystal growthproceeds from the bottom to the inside; thus, the oxide semiconductorfilm 56 b including a crystalline region is formed. In this manner, anoxide semiconductor film 56 including the seed crystal 56 a and theoxide semiconductor film 56 b is formed. In FIG. 9B, the interfacebetween the seed crystal 56 a and the oxide semiconductor film 56 b isindicated by a dotted line, and the seed crystal 56 a and the oxidesemiconductor film 56 b are illustrated as a stack of oxidesemiconductor layers; however, the interface is actually not distinctand is illustrated for easy understanding.

It is preferable that the steps from the formation of the baseinsulating film 53 to the second heat treatment be performedsuccessively without exposure to the air. The steps from the formationof the base insulating film 53 to the second heat treatment arepreferably performed in an atmosphere which is controlled to containlittle hydrogen and moisture (such as an inert atmosphere, areduced-pressure atmosphere, or a dry-air atmosphere); in terms ofmoisture, for example, a dry nitrogen atmosphere with a dew point oflower than or equal to −40° C., preferably a dew point of lower than orequal to −50° C. is preferably employed.

In the above method for forming the oxide semiconductor film, the oxidesemiconductor film including a region having favorable crystallinity canbe formed even with a low substrate temperature in deposition, ascompared to the method in which atoms whose atomic weight is light arepreferentially deposited on the oxide insulating film. Note that theoxide semiconductor film 56 formed by using the above two-step methodhas crystallinity substantially the same as that of the oxidesemiconductor film 55 which is formed by the method in which atoms whoseatomic weight is light are preferentially deposited on the oxideinsulating film, and the oxide semiconductor film 56 also has stableelectric conductivity. Therefore, a highly reliable semiconductor devicehaving stable electric characteristics can be provided by using theoxide semiconductor film which is formed by either of the above methods.As for a process described below, a manufacturing process of thetransistor 120 with the use of the oxide semiconductor film 55 isdescribed; however, the oxide semiconductor film 56 can also be used.

Through the above process, the oxide semiconductor film 55 including astack of the seed crystal 55 a and the oxide semiconductor film 55 b canbe formed over the base insulating film 53. Next, preferably, heattreatment is performed on the substrate 51, so that hydrogen is releasedfrom the oxide semiconductor film 55 and part of oxygen contained in thebase insulating film 53 is diffused into the oxide semiconductor film 55and in the vicinity of the interface between the base insulating film 53and the oxide semiconductor film 55.

The temperature of the heat treatment is preferably a temperature atwhich hydrogen is released from the oxide semiconductor film 55 and partof oxygen contained in the base insulating film 53 is released anddiffused into the oxide semiconductor film 55. The temperature istypically higher than or equal to 150° C. and lower than the strainpoint of the substrate 51, preferably higher than or equal to 250° C.and lower than or equal to 450° C. When the heat treatment temperatureis higher than the temperature in forming the oxide semiconductor filmincluding a crystalline region, a large amount of oxygen contained inthe base insulating film 53 can be released.

The heat treatment is preferably performed in an inert gas atmosphere,an oxygen atmosphere, a nitrogen atmosphere, or a mixed atmosphere ofoxygen and nitrogen, which contains little hydrogen and moisture. As aninert gas atmosphere, typically, an atmosphere of a rare gas such ashelium, neon, argon, xenon, or krypton is preferable. In addition,heating time of the heat treatment is longer than or equal to 1 minuteand shorter than or equal to 24 hours.

This heat treatment enables release of hydrogen from the oxidesemiconductor film 55 and diffusion of part of oxygen contained in thebase insulating film 53 into the oxide semiconductor film 55 and in thevicinity of the interface between the base insulating film 53 and theoxide semiconductor film 55. Through this process, oxygen defects in theoxide semiconductor film 55 can be reduced. As a result, the oxidesemiconductor film including a crystalline region, in which theconcentration of hydrogen and oxygen defects are reduced, can be formed.

Next, a mask is formed over the oxide semiconductor film 55, and thenthe oxide semiconductor film 55 is selectively etched with the use ofthe mask, so that an oxide semiconductor film 59 is formed asillustrated in FIG. 6C. After that, the mask is removed.

The mask used in the etching of the oxide semiconductor film 55 can beformed as appropriate by a photolithography step, an inkjet method, aprinting method, or the like. Wet etching or dry etching may be employedas appropriate for the etching of the oxide semiconductor film 55.

Next, as illustrated in FIG. 6D, a source electrode 61 a and a drainelectrode 61 b which are in contact with the oxide semiconductor film 59are formed.

The source electrode 61 a and the drain electrode 61 b can be formedusing a metal element selected from aluminum, chromium, copper,tantalum, titanium, molybdenum, tungsten, manganese, and zirconium; analloy containing any of these metal elements as a component; an alloycontaining any of these metal elements in combination; or the like.Alternatively, an alloy film or a nitride film which contains aluminumand one or more metal elements selected from titanium, tantalum,tungsten, molybdenum, chromium, neodymium, and scandium may be used. Thesource electrode 61 a and the drain electrode 61 b may be a single layeror a stack of two or more layers. For example, a single-layer structureof an aluminum film containing silicon, a two-layer structure in which acopper film is stacked over a Cu—Mg—Al alloy film, a two-layer structurein which a titanium film is stacked over an aluminum film, a two-layerstructure in which a titanium film is stacked over a titanium nitridefilm, a two-layer structure in which a tungsten film is stacked over atitanium nitride film, a two-layer structure in which a tungsten film isstacked over a tantalum nitride film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, or the like can be used.

The source electrode 61 a and the drain electrode 61 b can also beformed using a light-transmitting conductive material such as indium tinoxide, indium oxide containing tungsten oxide, indium zinc oxidecontaining tungsten oxide, indium oxide containing titanium oxide,indium tin oxide containing titanium oxide, indium zinc oxide, or indiumtin oxide to which silicon oxide is added. It is also possible to have alayered structure formed using the above light-transmitting conductivematerial and the above metal element.

After a conductive film is formed by a sputtering method, a CVD method,an evaporation method, or the like, a mask is formed over the conductivefilm and the conductive film is etched, and thereby the source electrode61 a and the drain electrode 61 b are formed. The mask formed over theconductive film can be formed by a printing method, an inkjet method, ora photolithography method as appropriate. Alternatively, the sourceelectrode 61 a and the drain electrode 61 b can be directly formed by aprinting method or an inkjet method.

At this time, the conductive film is formed over the oxide semiconductorfilm 59 and the base insulating film 53, and etched into a predeterminedpattern to form the source electrode 61 a and the drain electrode 61 b.

Alternatively, the oxide semiconductor film 59, the source electrode 61a, and the drain electrode 61 b may be formed in such a manner that aconductive film is formed over the oxide semiconductor film 55, and theoxide semiconductor film 55 and the conductive film are etched with amulti-tone photomask. In the above, an uneven mask is formed, the oxidesemiconductor film 55 and the conductive film are etched with the use ofthe uneven mask, the uneven mask is divided by ashing, and theconductive film is selectively etched with masks obtained by thedividing, whereby the oxide semiconductor film 59, the source electrode61 a, and the drain electrode 61 b can be formed. With this process, thenumber of the photomasks and the number of steps in photolithography canbe reduced.

Then, a gate insulating film 63 is formed over the oxide semiconductorfilm 59, the source electrode 61 a, and the drain electrode 61 b.

The gate insulating film 63 can be formed with a single layer or astacked layer including one or more of silicon oxide, siliconoxynitride, silicon nitride, silicon nitride oxide, aluminum oxide,aluminum oxynitride, and gallium oxide. It is preferable that a portionin the gate insulating film 63 which is in contact with the oxidesemiconductor film 59 contain oxygen. It is more preferable that thegate insulating film 63 be formed using an oxide insulating film fromwhich part of contained oxygen is released by heat treatment, like thebase insulating film 53. By using a silicon oxide film as the oxideinsulating film from which part of contained oxygen is released by heattreatment, oxygen can be diffused into the oxide semiconductor film 59in heat treatment in a later step, whereby characteristics of thetransistor 120 can be favorable.

When the gate insulating film 63 is formed using a high-k material suchas hafnium silicate (HfSiO_(x)), hafnium silicate to which nitrogen isadded (HfSi_(x)O_(y)N_(z)), hafnium aluminate to which nitrogen is added(HfAl_(x)O_(y)N_(z)), hafnium oxide, or yttrium oxide, gate leakagecurrent can be decreased. Further, a layered structure can be used inwhich a high-k material and one or more of silicon oxide, siliconoxynitride, silicon nitride, silicon nitride oxide, aluminum oxide,aluminum oxynitride, and gallium oxide are stacked. The thickness of thegate insulating film 63 is preferably greater than or equal to 1 nm andless than or equal to 300 nm, more preferably greater than or equal to 5nm and less than or equal to 50 nm. When the thickness of the gateinsulating film 63 is greater than or equal to 5 nm, gate leakagecurrent can be reduced.

Before the gate insulating film 63 is formed, the surface of the oxidesemiconductor film 59 may be exposed to plasma of an oxidative gas suchas oxygen, ozone, or dinitrogen monoxide so as to be oxidized, therebyreducing oxygen deficiency.

Next, a gate electrode 65 is formed in a region which is over the gateinsulating film 63 and overlaps with the oxide semiconductor film 59.

The gate electrode 65 can be formed using a metal element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten,manganese, and zirconium; an alloy containing any of these metalelements as a component; an alloy containing any of these metal elementsin combination; or the like. Alternatively, an alloy film or a nitridefilm which contains aluminum and one or more metal elements selectedfrom titanium, tantalum, tungsten, molybdenum, chromium, neodymium, andscandium may be used. Further, the gate electrode 65 may be a singlelayer or a stack of two or more layers. For example, a single-layerstructure of an aluminum film containing silicon, a two-layer structurein which a titanium film is stacked over an aluminum film, a two-layerstructure in which a titanium film is stacked over a titanium nitridefilm, a two-layer structure in which a tungsten film is stacked over atitanium nitride film, a two-layer structure in which a tungsten film isstacked over a tantalum nitride film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, or the like can be used.

The gate electrode 65 can also be formed using a light-transmittingconductive material such as indium tin oxide, indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, indium zinc oxide, or indium tin oxide to which silicon oxide isadded. In addition, a compound conductor obtained by sputtering using anIn—Ga—Zn—O-based metal oxide as a target in an atmosphere containingnitrogen may be used. It is also possible to have a layered structureformed using the above light-transmitting conductive material and theabove metal element.

Further, an insulating film 69 may be formed as a protective film overthe gate electrode 65 (see FIG. 6E). In addition, after contact holesare formed in the gate insulating film 63 and the insulating film 69,wirings may be formed so as to be connected to the source electrode 61 aand the drain electrode 61 b.

The insulating film 69 can be formed as appropriate with an insulatingfilm similar to that of the gate insulating film 63. When a siliconnitride film is formed as the insulating film 69 by a sputtering method,entry of moisture and an alkali metal from the outside can be prevented,and thus the amount of impurities contained in the oxide semiconductorfilm 59 can be reduced.

Note that after the gate insulating film 63 is formed or the insulatingfilm 69 is formed, heat treatment may be performed. This heat treatmentenables release of hydrogen from the oxide semiconductor film 59 anddiffusion of part of oxygen contained in base insulating film 53, thegate insulating film 63, or the insulating film 69 into the oxidesemiconductor film 59, in the vicinity of the interface between the baseinsulating film 53 and the oxide semiconductor film 59, and in thevicinity of the interface between the gate insulating film 63 and theoxide semiconductor film 59. Through this process, oxygen defects in theoxide semiconductor film 59 can be reduced, and defects at the interfacebetween the oxide semiconductor film 59 and the base insulating film 53or the interface between the oxide semiconductor film 59 and the gateinsulating film 63 can be reduced. As a result, the oxide semiconductorfilm 59 in which the concentration of hydrogen and oxygen defects arereduced can be formed. An i-type (intrinsic) or substantially i-typeoxide semiconductor film that is highly purified is formed as describedabove, whereby a transistor having excellent characteristics can berealized.

Through the above process, the transistor 120 in which a channel regionis formed in the oxide semiconductor film including a crystalline regioncan be manufactured. As illustrated in FIG. 6E, the transistor 120includes the base insulating film 53 provided over the substrate 51, theoxide semiconductor film 59 provided over the base insulating film 53,the source electrode 61 a and the drain electrode 61 b provided incontact with an upper surface and side surfaces of the oxidesemiconductor film 59, the gate insulating film 63 provided over theoxide semiconductor film 59, the gate electrode 65 provided over thegate insulating film 63 so as to overlap with the oxide semiconductorfilm 59, and the insulating film 69 provided over the gate electrode 65.

The oxide semiconductor film including a crystalline region used in thetransistor 120 has favorable crystallinity compared to an oxidesemiconductor film which is entirely amorphous, and defects typified byoxygen defects or impurities such as hydrogen bonded to dangling bondsor the like are reduced. A defect typified by an oxygen defect, hydrogenbonded to a dangling bond or the like, or the like functions as a sourcefor supplying a carrier in the oxide semiconductor film, which mightchange the electric conductivity of the oxide semiconductor film.Therefore, the oxide semiconductor film including a crystalline regionin which such defects are reduced has stable electric conductivity andis more electrically stable with respect to irradiation with visiblelight, ultraviolet light, and the like. By using such an oxidesemiconductor film including a crystalline region for a transistor, ahighly reliable semiconductor device having stable electriccharacteristics can be provided.

The semiconductor device according to the present invention is notlimited to the transistor 120 illustrated in FIGS. 6A to 6E. Forexample, a structure like a transistor 130 illustrated in FIG. 10A maybe employed. The transistor 130 includes a base insulating film 53provided over a substrate 51, a source electrode 61 a and a drainelectrode 61 b provided over the base insulating film 53, an oxidesemiconductor film 59 provided in contact with upper surfaces and sidesurfaces of the source electrode 61 a and the drain electrode 61 b, agate insulating film 63 provided over the oxide semiconductor film 59, agate electrode 65 provided over the gate insulating film 63 so as tooverlap with the oxide semiconductor film 59, and an insulating film 69provided over the gate electrode 65. That is, the transistor 130 isdifferent from the transistor 120 in that the oxide semiconductor film59 is provided in contact with the upper surfaces and the side surfacesof the source electrode 61 a and the drain electrode 61 b.

In addition, a structure like a transistor 140 illustrated in FIG. 10Bmay be employed. The transistor 140 includes a base insulating film 53provided over a substrate 51, a gate electrode 65 provided over the baseinsulating film 53, a gate insulating film 63 provided over the gateelectrode 65, an oxide semiconductor film 59 provided over the gateinsulating film 63, a source electrode 61 a and a drain electrode 61 bprovided in contact with an upper surface and side surfaces of the oxidesemiconductor film 59, and an insulating film 69 provided over the oxidesemiconductor film 59. That is, the transistor 140 is different from thetransistor 120 in that it has a bottom gate structure in which the gateelectrode 65 and the gate insulating film 63 are provided below theoxide semiconductor film 59.

In addition, a structure like a transistor 150 illustrated in FIG. 10Cmay be employed. The transistor 150 includes a base insulating film 53provided over a substrate 51, a gate electrode 65 provided over the baseinsulating film 53, a gate insulating film 63 provided over the gateelectrode 65, a source electrode 61 a and a drain electrode 61 bprovided over the gate insulating film 63, an oxide semiconductor film59 provided in contact with upper surfaces and side surfaces of thesource electrode 61 a and the drain electrode 61 b, and an insulatingfilm 69 provided over the oxide semiconductor film 59. That is, thetransistor 150 is different from the transistor 130 in that it has abottom gate structure in which the gate electrode 65 and the gateinsulating film 63 are provided below the oxide semiconductor film 59.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in other embodiments.

Embodiment 3

In this embodiment, a transistor having a structure that is differentfrom that of the transistor which includes the oxide semiconductor filmincluding a crystalline region described in the above embodiment will bedescribed with reference to FIGS. 11A to 11C and FIG. 12.

A transistor 160 having a top gate structure illustrated in FIG. 11Aincludes a base insulating film 353 provided over a substrate 351, ametal oxide film 371 provided over the base insulating film 353, anoxide semiconductor film 359 provided over the metal oxide film 371, asource electrode 361 a and a drain electrode 361 b provided in contactwith an upper surface and side surfaces of the oxide semiconductor film359, a metal oxide film 373 provided over the oxide semiconductor film359, a gate insulating film 363 provided over the metal oxide film 373,a gate electrode 365 provided over the gate insulating film 363 so as tooverlap with the oxide semiconductor film 359, and an insulating film369 provided over the gate electrode 365.

That is, the transistor 160 is different from the transistor 120described in the above embodiment in that the metal oxide film 371 isprovided between the base insulating film 353 and the oxidesemiconductor film 359, and the metal oxide film 373 is provided betweenthe oxide semiconductor film 359 and the gate insulating film 363. Notethat other structures of the transistor 160 are similar to those of thetransistor 120 described in the above embodiment. In other words, thedescription about the substrate 51 can be referred to for details of thesubstrate 351, the description about the base insulating film 53 can bereferred to for details of the base insulating film 353, the descriptionabout the oxide semiconductor film 59 can be referred to for details ofthe oxide semiconductor film 359, the description about the sourceelectrode 61 a and the drain electrode 61 b can be referred to fordetails of the source electrode 361 a and the drain electrode 361 b, thedescription about the gate insulating film 63 can be referred to fordetails of the gate insulating film 363, and the description about thegate electrode 65 can be referred to for details of the gate electrode365.

It is desirable to use a metal oxide containing a constituent similar tothat of the oxide semiconductor film 359 for the metal oxide film 371and the metal oxide film 373. Here, “a constituent similar to that ofthe oxide semiconductor film” means one or more atoms selected fromconstituent metal atoms of the oxide semiconductor film. It isparticularly preferable to use a constituent atom that can have acrystal structure similar to that of a crystalline region of the oxidesemiconductor film 359. In this manner, it is preferable that the metaloxide film 371 and the metal oxide film 373 be formed using a metaloxide containing a constituent similar to that of the oxidesemiconductor film 359 so as to have a crystalline region like the oxidesemiconductor film 359. Preferably, the crystalline region includes acrystal in which an a-b plane is substantially parallel with a surfaceof the film and a c-axis is substantially perpendicular to the surfaceof the film. That is, the crystalline region preferably has c-axisalignment. When the crystalline region is observed from a directionperpendicular to the surface of the film, it is preferable that atoms bearranged in a hexagonal lattice.

By providing the metal oxide film 371 including a crystalline region asdescribed above, a crystalline region with continuous c-axis alignmentcan be formed at the interface between the metal oxide film 371 and theoxide semiconductor film 359 and in the vicinity thereof. Accordingly,defects typified by oxygen defects or impurities such as hydrogen bondedto dangling bonds or the like can be reduced at the interface betweenthe metal oxide film 371 and the oxide semiconductor film 359 and in thevicinity thereof. In addition, also at the interface between the metaloxide film 373 and the oxide semiconductor film 359 and in the vicinitythereof, a crystalline region with continuous c-axis alignment can beformed.

As described above, a defect typified by an oxygen defect, hydrogenbonded to a dangling bond or the like, or the like functions as a sourcefor supplying a carrier, which might change the electric conductivity ofthe oxide semiconductor film. Therefore, the above-described defects,hydrogen, or the like are reduced at the interface between the oxidesemiconductor film 359 and the metal oxide film 371, at the interfacebetween the oxide semiconductor film 359 and the metal oxide film 373,and in the vicinity thereof. Therefore, the oxide semiconductor film 359has stable electric conductivity and is more electrically stable withrespect to irradiation with visible light, ultraviolet light, and thelike. By using the oxide semiconductor film 359, the metal oxide film371, and the metal oxide film 373 for a transistor, a highly reliablesemiconductor device having stable electric characteristics can beprovided.

In the case where an In—Ga—Zn—O-based metal oxide, for example, is usedfor the oxide semiconductor film 359, the metal oxide film 371 and themetal oxide film 373 may be formed using a metal oxide containinggallium oxide, particularly, a Ga—Zn—O-based metal oxide obtained byadding zinc oxide to gallium oxide. In the Ga—Zn—O-based metal oxide,the amount of substance of zinc oxide with respect to gallium oxide islower than 50%, preferably lower than 25%. Note that in the case wherethe Ga—Zn—O-based metal oxide is in contact with the In—Ga—Zn—O-basedmetal oxide, the energy barrier is about 0.5 eV on the conduction bandside and about 0.7 eV on the valence band side.

The metal oxide film 371 and the metal oxide film 373 each need to havea larger energy gap than the oxide semiconductor film 359 because theoxide semiconductor film 359 is used as an active layer. In addition,between the metal oxide film 371 and the oxide semiconductor film 359 orbetween the metal oxide film 373 and the oxide semiconductor film 359,it is necessary to form an energy barrier with at least a level withwhich a carrier does not flow out of the oxide semiconductor film 359 atroom temperature (20° C.). For example, an energy difference between thebottom of the conduction band of the metal oxide film 371 or the metaloxide film 373 and the bottom of the conduction band of the oxidesemiconductor film 359, or an energy difference between the top of thevalence band of the metal oxide film 371 or the metal oxide film 373 andthe top of the valence band of the oxide semiconductor film 359 ispreferably greater than or equal to 0.5 eV, more preferably greater thanor equal to 0.7 eV. In addition, the energy difference is preferablyless than or equal to 1.5 eV.

Further, it is preferable that the metal oxide film 371 have a smallerenergy gap than the base insulating film 353 and the metal oxide film373 have a smaller energy gap than the gate insulating film 363.

FIG. 12 is an energy band diagram (schematic diagram) of the transistor160, that is, an energy band diagram of a structure in which the gateinsulating film 363, the metal oxide film 373, the oxide semiconductorfilm 359, the metal oxide film 371, and the base insulating film 353 arearranged from the gate electrode 365 side. FIG. 12 shows the case wheresilicon oxide (with a band gap Eg of 8 eV to 9 eV) is used as each ofthe gate insulating film 363 and the base insulating film 353, aGa—Zn—O-based metal oxide (with a band gap Eg of 4.4 eV) is used as eachof the metal oxide films, and an In—Ga—Zn—O-based metal oxide (with aband gap Eg of 3.2 eV) is used as the oxide semiconductor film, on theassumption of the ideal state that the gate insulating film 363, themetal oxide film 373, the oxide semiconductor film 359, the metal oxidefilm 371, and the base insulating film 353 arranged from the gateelectrode 365 side are all intrinsic. An energy difference between thevacuum level and the bottom of the conduction band is 0.95 eV in siliconoxide, an energy difference between the vacuum level and the bottom ofthe conduction band is 4.1 eV in the Ga—Zn—O-based metal oxide, and anenergy difference between the vacuum level and the bottom of theconduction band is 4.6 eV in the In—Ga—Zn—O-based metal oxide.

As shown in FIG. 12, on the gate electrode side (channel side) of theoxide semiconductor film 359, an energy barrier of about 0.5 eV and anenergy barrier of about 0.7 eV exist at the interface between the oxidesemiconductor film 359 and the metal oxide film 373. On the back channelside (the side opposite to the gate electrode) of the oxidesemiconductor film 359, similarly, an energy barrier of about 0.5 eV andan energy barrier of about 0.7 eV exist at the interface between theoxide semiconductor film 359 and the metal oxide film 371. Since suchenergy barriers exist at the interfaces between the oxide semiconductorand the metal oxides, transfer of carriers at the interfaces can beprevented; thus, the carriers travel inside the oxide semiconductor anddo not travel from the oxide semiconductor film 359 to the metal oxidefilm 371 or the metal oxide film 373. That is, when the oxidesemiconductor film 359 is sandwiched between materials (here, the metaloxide films and the insulating films) whose band gaps are wider thanthat of the oxide semiconductor stepwise, carriers travel inside theoxide semiconductor film.

There is no particular limitation on a formation method of the metaloxide film 371 and the metal oxide film 373. For example, a filmformation method such as a plasma CVD method or a sputtering method canbe used for formation of the metal oxide film 371 and the metal oxidefilm 373. A sputtering method or the like is appropriate in terms of lowpossibility of entry of hydrogen, water, and the like. On the otherhand, a plasma CVD method or the like is appropriate in terms ofimprovement in film quality. In addition, when the metal oxide film 371and the metal oxide film 373 are formed using a Ga—Zn—O-based metaloxide film, the conductivity of the metal oxide films is high becausezinc is used, so that a DC sputtering method can be used to form themetal oxide film 371 and the metal oxide film 373.

The semiconductor device according to the present invention is notlimited to the transistor 160 illustrated in FIG. 11A. For example, astructure like a transistor 170 illustrated in FIG. 11B may be employed.The transistor 170 includes a base insulating film 353 provided over asubstrate 351, a metal oxide film 371 provided over the base insulatingfilm 353, an oxide semiconductor film 359 provided over the metal oxidefilm 371, a source electrode 361 a and a drain electrode 361 b providedin contact with an upper surface and side surfaces of the oxidesemiconductor film 359, a gate insulating film 363 provided over theoxide semiconductor film 359, a gate electrode 365 provided over thegate insulating film 363 so as to overlap with the oxide semiconductorfilm 359, and an insulating film 369 provided over the gate electrode365. That is, the transistor 170 is different from the transistor 160 inthat the metal oxide film 373 between the oxide semiconductor film 359and the gate insulating film 363 is not provided.

In addition, a structure like a transistor 180 illustrated in FIG. 11Cmay be employed. The transistor 180 includes a base insulating film 353provided over a substrate 351, an oxide semiconductor film 359 providedover the base insulating film 353, a source electrode 361 a and a drainelectrode 361 b provided in contact with an upper surface and sidesurfaces of the oxide semiconductor film 359, a metal oxide film 373provided over the oxide semiconductor film 359, a gate insulating film363 provided over the metal oxide film 373, a gate electrode 365provided over the gate insulating film 363 so as to overlap with theoxide semiconductor film 359, and an insulating film 369 provided overthe gate electrode 365. That is, the transistor 180 is different fromthe transistor 160 in that the metal oxide film 371 between the baseinsulating film 353 and the oxide semiconductor film 359 is notprovided.

In this embodiment, each of the transistors illustrated in FIGS. 11A to11C has a top gate structure and a structure in which the sourceelectrode 361 a and the drain electrode 361 b are in contact with theupper surface and the side surfaces of the oxide semiconductor film 359,but the semiconductor device according to the present invention is notlimited thereto. Like the transistors illustrated in FIGS. 10A to 10C inthe above embodiment, a bottom gate structure may be employed, or astructure in which the oxide semiconductor film 359 is in contact withupper surfaces and side surfaces of the source electrode 361 a and thedrain electrode 361 b may be employed.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in other embodiments.

Embodiment 4

In this embodiment, an example in which at least part of a drivercircuit and a transistor to be disposed in a pixel portion are formedover one substrate will be described below.

The transistor disposed in the pixel portion is formed in accordancewith Embodiment 2 or 3. Further, the transistor can easily be ann-channel transistor, and thus, part of a driver circuit that can beformed using an n-channel transistor in the driver circuit is formedover the same substrate as the transistor of the pixel portion.

By using the transistor described in the above embodiment for the pixelportion or the driver circuit as described above, a highly reliabledisplay device can be provided.

FIG. 29A illustrates an example of a block diagram of an active matrixdisplay device. A pixel portion 501, a first scan line driver circuit502, a second scan line driver circuit 503, and a signal line drivercircuit 504 are provided over a substrate 500 in the display device. Inthe pixel portion 501, a plurality of signal lines extended from thesignal line driver circuit 504 are arranged and a plurality of scanlines extended from the first scan line driver circuit 502 and thesecond scan line driver circuit 503 are arranged. Note that pixels eachincluding a display element are provided in matrix in respective regionsin each of which the scan line and the signal line intersect with eachother. The substrate 500 of the display device is connected to a timingcontrol circuit (also referred to as a controller or a control IC)through a connection portion such as a flexible printed circuit (FPC).

In FIG. 29A, the first scan line driver circuit 502, the second scanline driver circuit 503, and the signal line driver circuit 504 areformed over the same substrate 500 as the pixel portion 501.Accordingly, the number of components of a driver circuit which isprovided outside and the like are reduced, so that a reduction in costcan be achieved. Further, if the driver circuit is provided outside thesubstrate 500, wiring would need to be extended and the number of wiringconnections would be increased, but if the driver circuit is providedover the substrate 500, the number of wiring connections can be reduced.Accordingly, the reliability or yield can be improved.

FIG. 29B illustrates an example of a circuit structure of the pixelportion. Here, a pixel structure of a VA liquid crystal display panel isillustrated.

In this pixel structure, a plurality of pixel electrode layers areprovided in one pixel, and transistors are connected to respective pixelelectrode layers. The plurality of transistors are constructed so as tobe driven by different gate signals. In other words, signals applied toindividual pixel electrode layers in a multi-domain pixel are controlledindependently.

A gate wiring 512 of a transistor 516 and a gate wiring 513 of atransistor 517 are separated so that different gate signals can be giventhereto. In contrast, a source or drain electrode layer 514 functioningas a data line is used in common for the transistors 516 and 517. As thetransistors 516 and 517, the transistor described in the aboveembodiment can be used as appropriate. In the above manner, a highlyreliable liquid crystal display panel can be provided.

A first pixel electrode layer electrically connected to the transistor516 and a second pixel electrode layer electrically connected to thetransistor 517 have different shapes and are separated by a slit. Thesecond pixel electrode layer is provided so as to surround the externalside of the first pixel electrode layer which is spread in a V shape.Timing of voltage application is made to vary between the first andsecond pixel electrode layers by the transistors 516 and 517 in order tocontrol alignment of the liquid crystal. The transistor 516 is connectedto the gate wiring 512, and the transistor 517 is connected to the gatewiring 513. When different gate signals are supplied to the gate wiring512 and the gate wiring 513, operation timings of the transistor 516 andthe transistor 517 can be varied.

Further, a storage capacitor is formed using a capacitor wiring 510, agate insulating film functioning as a dielectric, and a capacitorelectrode electrically connected to the first pixel electrode layer orthe second pixel electrode layer.

The first pixel electrode layer, a liquid crystal layer, and a counterelectrode layer overlap with each other to form a first liquid crystalelement 518. In addition, the second pixel electrode layer, the liquidcrystal layer, and the counter electrode layer overlap with each otherto form a second liquid crystal element 519. The pixel structure is amulti-domain structure in which the first liquid crystal element 518 andthe second liquid crystal element 519 are provided in one pixel.

Note that an embodiment of the present invention is not limited to thepixel structure illustrated in FIG. 29B. For example, a switch, aresistor, a capacitor, a transistor, a sensor, a logic circuit, or thelike may be added to the pixel illustrated in FIG. 29B.

FIG. 29C illustrates an example of a circuit structure of the pixelportion. Here, a pixel structure of a display panel using an organic ELelement is illustrated.

In an organic EL element, by application of a voltage to alight-emitting element, electrons and holes are separately injected froma pair of electrodes into a layer containing a light-emitting organiccompound, and current flows. The carriers (electrons and holes) arerecombined, and thus, the light-emitting organic compound is excited.The light-emitting organic compound returns to a ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

FIG. 29C illustrates an example of a pixel structure to which digitaltime grayscale driving can be applied, as an example of a semiconductordevice.

A structure and operation of a pixel to which digital time grayscaledriving can be applied are described. Here, one pixel includes twon-channel transistors each of which includes an oxide semiconductorlayer as a channel formation region.

A pixel 520 includes a switching transistor 521, a driving transistor522, a light-emitting element 524, and a capacitor 523. A gate electrodelayer of the switching transistor 521 is connected to a scan line 526, afirst electrode (one of a source electrode layer and a drain electrodelayer) of the switching transistor 521 is connected to a signal line525, and a second electrode (the other of the source electrode layer andthe drain electrode layer) of the switching transistor 521 is connectedto a gate electrode layer of the driving transistor 522. The gateelectrode layer of the driving transistor 522 is connected to a powersupply line 527 through the capacitor 523, a first electrode of thedriving transistor 522 is connected to the power supply line 527, and asecond electrode of the driving transistor 522 is connected to a firstelectrode (pixel electrode) of the light-emitting element 524. A secondelectrode of the light-emitting element 524 corresponds to a commonelectrode 528. The common electrode 528 is electrically connected to acommon potential line formed over the same substrate as the commonelectrode 528.

As the switching transistor 521 and the driving transistor 522, thetransistor described in the above embodiment can be used as appropriate.In this manner, a highly reliable display panel including an organic ELelement can be provided.

Note that the second electrode (the common electrode 528) of thelight-emitting element 524 is set to have a low power supply potential.Note that the low power supply potential is a potential satisfying thelow power supply potential<a high power supply potential with referenceto the high power supply potential that is set for the power supply line527. As the low power supply potential, GND, 0 V, or the like may beemployed, for example. In order to make the light-emitting element 524emit light by applying a potential difference between the high powersupply potential and the low power supply potential to thelight-emitting element 524 so that current is supplied to thelight-emitting element 524, each of the potentials is set so that thepotential difference between the high power supply potential and the lowpower supply potential is higher than or equal to the forward thresholdvoltage of the light-emitting element 524.

Gate capacitance of the driving transistor 522 may be used as asubstitute for the capacitor 523, in which case the capacitor 523 can beomitted. The gate capacitance of the driving transistor 522 may beformed between a channel formation region and the gate electrode layer.

In the case of a voltage-input voltage driving method, a video signal isinput to the gate electrode layer of the driving transistor 522 so thatthe driving transistor 522 is in either of two states of beingsufficiently turned on and turned off. That is, the driving transistor522 operates in a linear region. The driving transistor 522 operates ina linear region, and thus, a voltage higher than the voltage of thepower supply line 527 is applied to the gate electrode layer of thedriving transistor 522. Note that a voltage of higher than or equal to(power supply line voltage+Vth of the driving transistor 522) is appliedto the signal line 525.

In the case of performing analog grayscale driving instead of digitaltime grayscale driving, the same pixel structure as that in FIG. 29C canbe used by changing signal input.

In the case of performing analog grayscale driving, a voltage of higherthan or equal to the sum of the forward voltage of the light-emittingelement 524 and Vth of the driving transistor 522 is applied to the gateelectrode layer of the driving transistor 522. The forward voltage ofthe light-emitting element 524 indicates a voltage at which a desiredluminance is obtained, and includes at least a forward thresholdvoltage. A video signal by which the driving transistor 522 is operatedin a saturation region is input, so that current can be supplied to thelight-emitting element 524. In order for the driving transistor 522 tooperate in a saturation region, the potential of the power supply line527 is set to be higher than the gate potential of the drivingtransistor 522. Since the video signal is an analog signal, a current inaccordance with the video signal can be supplied to the light-emittingelement 524, and analog grayscale driving can be performed.

Note that an embodiment of the present invention is not limited to thepixel structure illustrated in FIG. 29C. For example, a switch, aresistor, a capacitor, a sensor, a transistor, a logic circuit, or thelike may be added to the pixel illustrated in FIG. 29C.

Embodiment 5

A semiconductor device disclosed in this specification can be applied toa variety of electronic devices (including amusement machines). Examplesof the electronic devices are a television set (also referred to as atelevision or a television receiver), a monitor of a computer or thelike, a camera such as a digital camera or a digital video camera, adigital photo frame, a mobile phone handset (also referred to as amobile phone or a mobile phone device), a portable game machine, aportable information terminal, an audio reproducing device, alarge-sized game machine such as a pachinko machine, and the like.Examples of electronic devices each including the display devicedescribed in the above embodiment will be described.

FIG. 30A illustrates a portable information terminal, which includes amain body 1001, a housing 1002, display portions 1003 a and 1003 b, andthe like. The display portion 1003 b is a touch panel. By touching akeyboard button 1004 displayed on the display portion 1003 b, a screencan be operated, and text can be input. It is needless to say that thedisplay portion 1003 a may be a touch panel. A liquid crystal panel oran organic light-emitting panel is manufactured by using the transistordescribed in the above embodiment as a switching element and applied tothe display portion 1003 a or 1003 b, whereby a highly reliable portableinformation terminal can be provided.

The portable information terminal in FIG. 30A can have a function ofdisplaying a variety of data (e.g., a still image, a moving image, and atext image) on the display portion, a function of displaying a calendar,a date, the time, or the like on the display portion, a function ofoperating or editing data displayed on the display portion, a functionof controlling processing by various kinds of software (programs), andthe like. Furthermore, an external connection terminal (an earphoneterminal, a USB terminal, or the like), a recording medium insertionportion, and the like may be provided on the back surface or the sidesurface of the housing.

The portable information terminal illustrated in FIG. 30A may beconfigured to be able to transmit and receive data wirelessly. Throughwireless communication, desired book data or the like can be purchasedand downloaded from an electronic book server.

FIG. 30B illustrates a portable music player, which includes, in a mainbody 1021, a display portion 1023, a fixing portion 1022 with which theportable music player can be worn on the ear, a speaker, an operationbutton 1024, an external memory slot 1025, and the like. A liquidcrystal panel or an organic light-emitting panel is manufactured byusing the transistor described in the above embodiment as a switchingelement and applied to the display portion 1023, whereby a highlyreliable portable music player can be provided.

Furthermore, when the portable music player illustrated in FIG. 30B hasan antenna, a microphone function, or a wireless communication functionand is used with a mobile phone, a user can talk on the phone wirelesslyin a hands-free way while driving a car or the like.

FIG. 30C illustrates a mobile phone, which includes two housings, ahousing 1030 and a housing 1031. The housing 1031 includes a displaypanel 1032, a speaker 1033, a microphone 1034, a pointing device 1036, acamera lens 1037, an external connection terminal 1038, and the like.The housing 1030 is provided with a solar cell 1040 for charging themobile phone, an external memory slot 1041, and the like. In addition,an antenna is incorporated in the housing 1031. The transistor describedin the above embodiment is applied to the display panel 1032, whereby ahighly reliable mobile phone can be provided.

Further, the display panel 1032 includes a touch panel. A plurality ofoperation keys 1035 which are displayed as images are indicated bydotted lines in FIG. 30C. Note that a boosting circuit by which avoltage output from the solar cell 1040 is increased to be sufficientlyhigh for each circuit is also included.

For example, a power transistor used for a power supply circuit such asa boosting circuit can also be formed when the oxide semiconductor filmof the transistor described in the above embodiment has a thickness ofgreater than or equal to 2 μm and less than or equal to 50 μM.

In the display panel 1032, the direction of display is changed asappropriate depending on the application mode. Further, the mobile phoneis provided with the camera lens 1037 on the same surface as the displaypanel 1032, and thus it can be used as a video phone. The speaker 1033and the microphone 1034 can be used for videophone calls, recording, andplaying sound, etc. as well as voice calls. Moreover, the housings 1030and 1031 in a state where they are developed as illustrated in FIG. 30Ccan shift, by sliding, to a state where one is lapped over the other.Therefore, the size of the mobile phone can be reduced, which makes themobile phone suitable for being carried around.

The external connection terminal 1038 can be connected to an AC adaptorand a variety of cables such as a USB cable, whereby charging and datacommunication with a personal computer or the like are possible.Further, by inserting a recording medium into the external memory slot1041, a larger amount of data can be stored and moved.

Further, in addition to the above functions, an infrared communicationfunction, a television reception function, or the like may be provided.

FIG. 30D illustrates an example of a television set. In a television set1050, a display portion 1053 is incorporated in a housing 1051. Imagescan be displayed on the display portion 1053. Here, the housing 1051 issupported on a stand 1055 incorporating a CPU. When the transistordescribed in the above embodiment is applied to the display portion1053, the television set 1050 can have high reliability.

The television set 1050 can be operated with an operation switch of thehousing 1051 or a separate remote controller. Further, the remotecontroller may be provided with a display portion for displaying dataoutput from the remote controller.

Note that the television set 1050 is provided with a receiver, a modem,and the like. With the receiver, a general television broadcast can bereceived. Moreover, when the television set is connected to acommunication network with or without wires via a modem, one-way (from asender to a receiver) or two-way (between a sender and a receiver orbetween receivers) data communication can be performed.

Further, the television set 1050 is provided with an external connectionterminal 1054, a storage medium recording and reproducing portion 1052,and an external memory slot. The external connection terminal 1054 canbe connected to various types of cables such as a USB cable, and datacommunication with a personal computer or the like is possible. A diskstorage medium is inserted into the storage medium recording andreproducing portion 1052, and reading data stored in the storage mediumand writing data to the storage medium can be performed. In addition, animage, a video, or the like stored as data in an external memory 1056inserted into the external memory slot can be displayed on the displayportion 1053.

When the semiconductor device described in the above embodiment isapplied to the external memory 1056 or a CPU, the television set 1050can have high reliability and power consumption thereof can besufficiently reduced.

Example

Measurements were performed on an oxide semiconductor film according toan embodiment of the present invention and a semiconductor deviceincluding the oxide semiconductor film by using a variety of methods.Results thereof will be described in this example.

<1. Observation of TEM Image and Measurement of Electron DiffractionIntensity Using TEM, and XRD Measurement>

In this section, an oxide semiconductor film was formed in accordancewith the above embodiment, and the oxide semiconductor film was observedwith the use of a transmission electron microscope (TEM). A resultthereof is described below.

In this section, the oxide semiconductor film was formed over a quartzsubstrate by a sputtering method. In this way, Sample A, Sample B,Sample C, Sample D, and Sample E were manufactured. The substratetemperatures in deposition for Sample A, Sample B, Sample C, Sample D,and Sample E were room temperature, 200° C., 250° C., 300° C., and 400°C., respectively. Samples A and B were manufactured with a substratetemperature in deposition of lower than that in the method in Embodiment2, and Samples C to E were manufactured with a substrate temperature inthe range in the method in Embodiment 2. A target for forming the oxidesemiconductor film had a composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:2[molar ratio]. Other conditions were as follows: as for the flow ofdeposition gases, the flow of an argon gas was 30 sccm and the flow ofan oxygen gas was 15 sccm, the pressure was 0.4 Pa, the distance betweenthe substrate and the target was 60 mm, and the radio frequency (RF)power was 0.5 kW. Note that the aiming thickness of each of Samples A,B, and E was 50 nm, and the aiming thickness of each of Samples C and Dwas 100 nm.

After the oxide semiconductor film was formed, heat treatment wasperformed on the quartz substrate over which the oxide semiconductorfilm was formed. The heat treatment was performed in a dry atmospherewith a dew point of −24° C. at a temperature of 450° C. for 1 hour. Inthis manner, Samples A, B, C, D, and E, in each of which the oxidesemiconductor film was formed over the quartz substrate, weremanufactured.

Further, in a manner different from those of Samples A to E, an oxidesemiconductor film was formed by the two-step method described inEmbodiment 2, thereby forming Sample F. Sample F was formed in such away that, first, a first oxide semiconductor film having a thickness of5 nm was formed, first heat treatment was performed on the first oxidesemiconductor film, a second oxide semiconductor film having a thicknessof 30 nm was formed over the first oxide semiconductor film, and secondheat treatment was performed on the first oxide semiconductor film andthe second oxide semiconductor film.

Here, a target for forming the first oxide semiconductor film had acomposition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio]. Otherconditions were as follows: as for the flow of deposition gases, theflow of an argon gas was 30 sccm and the flow of an oxygen gas was 15sccm, the pressure was 0.4 Pa, the distance between the substrate andthe target was 60 mm, and the radio frequency (RF) power was 0.5 kW. Thefirst heat treatment was performed at a temperature of 650° C. in anitrogen atmosphere for 1 hour.

In addition, a target for forming the second oxide semiconductor filmhad a composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio]. Otherconditions were as follows: as for the flow of deposition gases, theflow of an argon gas was 30 sccm and the flow of an oxygen gas was 15sccm, the pressure was 0.4 Pa, the distance between the substrate andthe target was 60 mm, and the radio frequency (RF) power was 0.5 kW. Thesecond heat treatment was performed at a temperature of 650° C. in a dryatmosphere with a dew point of −24° C. for 1 hour.

In this manner, Sample F in which the oxide semiconductor film wasformed over the quartz substrate by the two-step method wasmanufactured.

As a comparative example of Samples A to F, an IGZO single crystal filmhaving a thickness of 150 nm was formed over an yttria-stabilizedzirconia (YSZ) substrate, thereby forming Sample G.

By using TEM, TEM images and electron diffraction patterns of Samples Ato G were taken by irradiating the substrate over which the oxidesemiconductor film was formed with an electron beam perpendicularly tothe substrate, that is, in parallel with the c-axis direction in theabove embodiment. FIGS. 13A to 13E are cross-sectional TEM images ofSamples A to E, respectively. Since the direction of a top surface ofthe sample corresponds to the longitudinal direction in each of thecross-sectional TEM images in FIGS. 13A to 13E, the longitudinaldirection of the image is the c-axis direction. FIGS. 14A to 14E areplane TEM images of Samples A to E, respectively. Since the direction ofa top surface of the sample corresponds to the vertical direction ineach of the plane TEM images in FIGS. 14A to 14E, the vertical directionof the image is the c-axis direction. FIGS. 15A to 15E are electrondiffraction patterns of Samples A to E, respectively. Since thedirection of a top surface of the sample corresponds to the verticaldirection in each of the electron diffraction patterns in FIGS. 15A to15E, the vertical direction of the pattern is the c-axis direction.FIGS. 16A and 16B are plane TEM images of Samples F and G, respectively.FIG. 16C is an electron diffraction pattern of Sample F. FIGS. 16D and16E are electron diffraction patterns of Sample G. Since the directionof a top surface of the sample corresponds to the vertical direction ineach of the plane TEM images and the electron diffraction patterns inFIGS. 16A to 16E, the vertical direction of the image and the pattern isthe c-axis direction.

Note that in this section, the cross-sectional TEM images, the plane TEMimages, and the electron diffraction patterns were taken with H-9000NARmanufactured by Hitachi High-Technologies Corporation by setting thediameter of an electron beam spot to 1 nm and the acceleration voltageto 300 kW.

In the cross-sectional TEM images in FIGS. 13C to 13E, a crystallineregion with c-axis alignment was observed. On the other hand, in thecross-sectional TEM images in FIGS. 13A and 13B, a crystalline regionwith c-axis alignment was not clearly observed. This shows that thecrystalline region with c-axis alignment is formed in the oxidesemiconductor film formed with a substrate temperature in deposition ofhigher than 200° C., preferably higher than or equal to 250° C. Theclarity of the crystalline region with c-axis alignment is increasedfrom FIGS. 13C to 13E sequentially, and thus, it is estimated thatcrystallinity of the oxide semiconductor film is improved as thesubstrate temperature in forming the oxide semiconductor film isincreased.

In the plane TEM image in FIG. 14E, atoms arranged in a hexagonallattice were observed. Also in the plane TEM images in FIGS. 14C and14D, atoms arranged in a hexagonal lattice were observed in lightcolors. In the plane TEM images in FIGS. 14A and 14B, atoms arranged ina hexagonal lattice were not clearly observed. In addition, in the planeTEM images in FIGS. 16A and 16B, atoms arranged in a hexagonal latticewere observed. From the above, it is assumed that the crystalline regionwith c-axis alignment in the oxide semiconductor film tends to have ahexagonal crystal structure having three-fold symmetry as illustrated inFIG. 2. In addition, it was found that the crystalline region was alsoformed in the oxide semiconductor film of Sample F manufactured by thetwo-step method, as in Samples C to E. As in the observation results ofthe cross-sectional TEM images in FIGS. 13A to 13E, it is assumed thatcrystallinity of the oxide semiconductor film is improved as thesubstrate temperature in forming the oxide semiconductor film isincreased. The observation of FIGS. 13A to 13E and FIGS. 14A to 14E showthat each of Samples A and B is an amorphous oxide semiconductor filmhardly having crystallinity and each of Samples C to F is an oxidesemiconductor film including a crystalline region with c-axis alignment.

Each of the electron diffraction patterns in FIGS. 15A to 15E has aconcentric circular halo pattern, in which the width of a diffractionpattern is wide and not distinct and the electron diffraction intensityof an outer halo pattern is lower than that of an inner halo pattern.Further, the electron diffraction intensity of the outer halo pattern isincreased from FIGS. 15A to 15E sequentially. An electron diffractionpattern in FIG. 16C also has a concentric circular halo pattern;however, as compared to those in FIGS. 15A to 15E, in FIG. 16C, thewidth of the halo pattern is thinner, and the electron diffractionintensity of an inner halo pattern and that of an outer halo pattern aresubstantially equal to each other.

An electron diffraction pattern in FIG. 16D is a spot pattern, unlikethose in FIGS. 15A to 15E and FIG. 16C. An image of the electrondiffraction pattern in FIG. 16D is processed to obtain a concentriccircular pattern in FIG. 16E; the pattern in FIG. 16E is not a halopattern because the width of the concentric circular pattern is thin,unlike those in FIGS. 15A to 15E and FIG. 16C. Further, FIG. 16E isdifferent from FIGS. 15A to 15E and FIG. 16C in that the electrondiffraction intensity of an outer concentric circular pattern is higherthan that of an inner concentric circular pattern.

FIG. 17 is a graph showing the electron diffraction intensities ofSamples A to G. In the graph shown in FIG. 17, the vertical axisindicates the electron diffraction intensity (arbitrary unit) and thehorizontal axis indicates the magnitude (1/d [1/nm]) of a scatteringvector of the sample. Note that d in the magnitude (1/d [1/nm]) of thescattering vector denotes an interplanar spacing in crystals. Themagnitude (1/d) of the scattering vector can be represented by thefollowing formula by using a distance r from a spot of a transmittedwave in the center to a concentric circular pattern of a diffracted wavein a film of the electron diffraction pattern, a camera length L betweenthe sample and the film in TEM, and a wavelength λ of an electron beamused in TEM.

$\begin{matrix}{{{r\; d} = {\lambda\; L}}{\frac{1}{d} = \frac{r}{\lambda\; L}}} & \lbrack {{Formula}\mspace{14mu} 1} \rbrack\end{matrix}$

That is, the magnitude (1/d) of the scattering vector on the horizontalaxis in FIG. 17 is in proportion to the distance r from a spot of atransmitted wave in the center to a concentric circular pattern of adiffracted wave in each of the electron diffraction patterns in FIGS.15A to 15E and FIGS. 16C and 16E.

That is, in the graph shown in FIG. 17, a first peak in the range of 3.3nm⁻¹≦1/d≦4.1 nm⁻¹ corresponds to a peak of the inner halo pattern and apeak of the inner concentric circular pattern in the electrondiffraction patterns in FIGS. 15A to 15E and FIGS. 16A and 16E, and asecond peak in the range of 5.5 nm⁻¹≦1/d≦7.1 nm⁻¹ corresponds to a peakof the outer halo pattern and a peak of the outer concentric circularpattern in the electron diffraction patterns in FIGS. 15A to 15E andFIGS. 16A and 16E.

FIG. 18 is a graph showing the full width at half maximum of the firstpeak of each of Samples A to G, and FIG. 19 is a graph showing the fullwidth at half maximum of the second peak of each of Samples A to G. Inthe graph shown in FIG. 18, the vertical axis indicates the full widthat half maximum (FWHM) (nm⁻¹) of the first peak and the horizontal axisindicates the substrate temperature (° C.) in forming the oxidesemiconductor film of Samples A to E. In addition, dotted lines in thegraph of FIG. 18 indicate the values of the full width at half maximumof the first peaks in Samples F and G. In a manner similar to that inFIG. 18, the full width at half maximum of the second peaks is shown inthe graph of FIG. 19. Positions (nm⁻¹) and the full width at halfmaximum (nm⁻¹) of the first peak and the second peak in FIG. 18 and FIG.19 are listed in Table 1.

TABLE 1 First Peak Second Peak Peak Full Width at Peak Full Width atName of Position Half Maximum Position Half Maximum Sample (1/nm) (1/nm)(1/nm) (1/nm) Sample A 3.685 0.770 6.325 1.606 Sample B 3.674 0.7156.270 1.375 Sample C 3.674 0.660 6.226 1.133 Sample D 3.597 0.594 6.1160.913 Sample E 3.630 0.605 6.138 0.859 Sample F 3.575 0.418 6.105 0.473Sample G 3.509 0.149 6.072 0.149

FIG. 18 and FIG. 19 show a tendency in which the full width at halfmaximum and the peak position of each of the first peak and the secondpeak decrease as the substrate temperature in formation of the oxidesemiconductor film is increased. It is also shown that the full width athalf maximum of each of the first peak and the second peak does notdiffer greatly between the substrate temperatures in film formation inthe range of 300° C. to 400° C. Further, values of the full width athalf maximum and the peak position of each of the first peak and thesecond peak of Sample F which was formed by the two-step method weresmaller than values of the full width at half maximum and the peakposition of Samples A to E and larger than values of the full width athalf maximum and the peak position of Sample G which was in a singlecrystal state.

The crystallinity of the oxide semiconductor film including acrystalline region with c-axis alignment is different from thecrystallinity of Sample G which has a single crystal structure.Therefore, in the measurement of the electron diffraction intensity inwhich irradiation with an electron beam is performed from the c-axisdirection, the full width at half maximum of each of the first peak andthe second peak is greater than or equal to 0.2 nm⁻¹; preferably, thefull width at half maximum of the first peak is greater than or equal to0.4 nm⁻¹, and the full width at half maximum of the second peak isgreater than or equal to 0.45 nm⁻¹.

From FIGS. 13A to 13E and FIGS. 14A to 14E, crystallinity is not clearlyobserved in Samples A and B, that is, in the oxide semiconductor filmsformed with a substrate temperature in deposition of lower than or equalto 200° C.; in consideration of this, it is preferable that in the oxidesemiconductor film including a crystalline region with c-axis alignment,the full width at half maximum of the first peak be less than or equalto 0.7 nm⁻¹, and the full width at half maximum of the second peak beless than or equal to 1.4 nm⁻¹ in the measurement of the electrondiffraction intensity in which irradiation with an electron beam isperformed from the c-axis direction.

In addition, X-ray diffraction (XRD) measurement was performed onSamples A, E, and G, whose results support the above-described TEMmeasurement results.

FIG. 20 shows the results of measuring XRD spectra of Samples A and E byusing an out-of-plane method. In FIG. 20, the vertical axis indicatesthe X ray diffraction intensity (arbitrary unit), and the horizontalaxis indicates the rotation angle 2θ [deg.].

FIG. 20 shows that a strong peak is observed in a region where 2θ is inthe vicinity of 30° in Sample E, whereas a peak is hardly observed in aregion where 2θ is in the vicinity of 30° in Sample A. This peak isattributed to diffraction in (009) plane of an IGZO crystal. This alsoindicates that Sample E is an oxide semiconductor film including acrystalline region with c-axis alignment, which is clearly differentfrom Sample A which has an amorphous structure.

FIG. 21A shows the result of measuring an XRD spectrum of Sample E byusing an in-plane method. Similarly, FIG. 21B shows the result ofmeasuring an XRD spectrum of Sample G by using an in-plane method. InFIGS. 21A and 21B, the vertical axis indicates the X ray diffractionintensity (arbitrary unit), and the horizontal axis indicates therotation angle φ [deg.]. In an in-plane method used in this example, XRDmeasurement was performed by rotating the sample at a rotation angle φusing the c-axis of the sample as a rotation axis.

In the XRD spectrum of Sample G shown in FIG. 21B, peaks are observed atequal intervals of 60° which is the rotation angle, which shows thatSample G is a single crystal film having six-fold symmetry. On the otherhand, in the XRD spectrum of Sample E shown in FIG. 21A, regular peaksare not observed, which shows that there is no alignment in the a-bplane direction in the crystalline region. That is, individualcrystalline regions in Sample E are crystallized along the c-axes butalignment along the a-b planes does not necessarily appear. This alsoindicates that Sample E is an oxide semiconductor film including acrystalline region with c-axis alignment, which is clearly differentfrom Sample G which has a single crystal structure.

As described above, the oxide semiconductor film including a crystallineregion with c-axis alignment according to an embodiment of the presentinvention has crystallinity that is clearly different from that of theoxide semiconductor film with an amorphous structure and that of theoxide semiconductor film with a single crystal structure.

The oxide semiconductor film including a crystalline region with c-axisalignment as described above has favorable crystallinity as compared toan oxide semiconductor film which is entirely amorphous, and defectstypified by oxygen defects or impurities such as hydrogen bonded to adangling bond or the like are reduced. A defect typified by an oxygendefect, hydrogen bonded to a dangling bond or the like, or the likefunctions as a source for supplying a carrier in the oxide semiconductorfilm, which might change the electric conductivity of the oxidesemiconductor film. Therefore, the oxide semiconductor film including acrystalline region in which such defects are reduced has stable electricconductivity and is more electrically stable with respect to irradiationwith visible light, ultraviolet light, and the like. By using such anoxide semiconductor film including a crystalline region for atransistor, a highly reliable semiconductor device having stableelectric characteristics can be provided.

<2. ESR Measurement>

In this section, an oxide semiconductor film was formed in accordancewith the above embodiment, and the oxide semiconductor film wasevaluated with the use of an electron spin resonance (ESR) method. Aresult thereof is described below.

In this section, Sample H in which an oxide semiconductor film wasformed over a quartz substrate by a sputtering method and Sample Iobtained by performing heat treatment on the quartz substrate over whichthe oxide semiconductor film was formed were manufactured. A target forforming the oxide semiconductor film had a composition ratio whereIn₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio]. Other conditions were as follows:as for the flow of deposition gases, the flow of an argon gas was 30sccm and the flow of an oxygen gas was 15 sccm, the substratetemperature in deposition was 400° C., the pressure was 0.4 Pa, thedistance between the substrate and the target was 60 mm, the radiofrequency (RF) power was 0.5 kW, and the film thickness was 100 nm.

After the oxide semiconductor film was formed, heat treatment wasperformed on the quartz substrate over which the oxide semiconductorfilm was formed to form Sample I. The heat treatment was performed in adry atmosphere with a dew point of −24° C. at a temperature of 450° C.for 1 hour. In this manner, Samples H and I, in each of which the oxidesemiconductor film was formed over the quartz substrate, weremanufactured.

In this section, ESR measurement performed on Samples H and I isdescribed. ESR measurement is a method by which lone electrons in asubstance are measured by utilizing Zeeman effect. When a magnetic fieldH applied to the sample is swept while the sample is irradiated with amicrowave having a specific frequency v, lone electrons in the sampleabsorb the microwave in a specific magnetic field H, whereby transitionof a spin energy level parallel with the magnetic field to a spin energylevel anti-parallel with the magnetic field is caused. The relationbetween the frequency v of the microwave absorbed by the lone electronsin the sample and the magnetic field H applied to the sample can beexpressed by the following formula.hv=gμ _(B) H  [Formula 2]

In the formula, h denotes a Planck constant and μ_(B) denotes a Bohrmagneton. In addition, g is a coefficient called a g value which variesdepending on a local magnetic field applied to the lone electron in thesubstance; that is, by calculating the g value using the above formula,the environment of the lone electron such as a dangling bond can beknown.

In this example, the ESR measurement was performed by using E500manufactured by Bruker Corporation. The measurement condition was asfollows: the measurement temperature was room temperature, the microwavefrequency was 9.5 GHz, and the microwave power was 0.2 mW.

The results of the ESR measurement performed on Samples H and I areshown in FIG. 22. In the graph shown in FIG. 22, the vertical axisindicates a first-order differential of the absorption intensity of themicrowave, and the horizontal axis indicates a g value.

As shown in the graph of FIG. 22, a signal corresponding to theabsorption of the microwave was not observed as for Sample I, whereas asignal corresponding to the absorption of the microwave was observed ina region where the g value was in the vicinity of 1.93 as for Sample H.By calculating the value of an integral of the signal in a region wherethe g value is in the vicinity of 1.93, the spin density of loneelectrons corresponding to the absorption of the microwave, i.e., a spindensity of 1.3×10¹⁸ (spins/cm³) can be obtained. Note that in Sample I,the absorption of the microwave is less than the lower detection limit;therefore, the spin density of lone electrons in Sample 1 is lower thanor equal to 1×10¹⁶ (spins/cm³).

Here, quantum chemistry calculation was performed in order to examinethe following: to which kind of dangling bond the signal at a g value inthe vicinity of 1.93 is attributed in an In—Ga—Zn—O-based oxidesemiconductor film. Specifically, a cluster model in which a metal atomhas a dangling bond corresponding to an oxygen defect was formed and thestructure of the cluster model was optimized, and the g value thereofwas calculated.

Amsterdam density functional (ADF) software was used to optimize thestructure of the model and calculate the g value of the model whosestructure was optimized. GGA:BP was used as a functional and TZ2P wasused as a basis function in both the optimization of the structure ofthe model and the calculation of the g value of the model whosestructure was optimized. In addition, as a Core Type, Large was used forthe optimization of the structure of the model and None was used for thecalculation of the g value.

FIG. 23 shows models of a dangling bond in the In—Ga—Zn—O-based oxidesemiconductor film, which were obtained by the above quantum chemistrycalculation. FIG. 23 shows a dangling bond (g=1.984) due to an oxygendefect in an indium-oxygen bond, a dangling bond (g=1.995) due to anoxygen defect in a gallium-oxygen bond, and a dangling bond (g=1.996)due to an oxygen defect in a zinc-oxygen bond. These g values of thedangling bonds are relatively close to g=1.93 of the signalcorresponding to the absorption of the microwave of Sample H. That is,Sample H has a possibility that an oxygen defect is generated in a bondof oxygen and one or more of indium, gallium, and zinc.

However, a signal corresponding to the absorption of the microwave isnot observed in a region where the g value is in the vicinity of 1.93 asfor Sample I. This indicates that oxygen is added to an oxygen defect byperforming heat treatment in a dry atmosphere after the oxidesemiconductor film is formed. As described in the above embodiment, anoxygen defect in the oxide semiconductor film can function as a carrierwhich changes the electric conductivity; by reducing oxygen defects, thereliability of a transistor including the oxide semiconductor film canbe improved.

Therefore, in the oxide semiconductor film including a crystallineregion with c-axis alignment according to an embodiment of the presentinvention, oxygen is preferably added to an oxygen defect by performingheat treatment after the oxide semiconductor film is formed, and thespin density in a region where the g value is in the vicinity of 1.93 inESR measurement is preferably lower than or equal to 1.3×10¹⁸(spins/cm³), more preferably lower than or equal to 1×10¹⁶ (spins/cm³).

<3. Low-Temperature PL Measurement>

In this section, an oxide semiconductor film was formed in accordancewith the above embodiment, and the oxide semiconductor film wasevaluated with the use of low-temperature photoluminescence (PL)measurement. A result thereof is described below.

In this section, Sample J in which an oxide semiconductor film wasformed over a quartz substrate by a sputtering method with a substratetemperature in deposition of 200° C. and Sample K in which an oxidesemiconductor film was formed over a quartz substrate by a sputteringmethod with a substrate temperature in deposition of 400° C. weremanufactured. That is, Sample J is an oxide semiconductor film whichdoes not include a crystalline region with c-axis alignment, and SampleK is an oxide semiconductor film which includes a crystalline regionwith c-axis alignment. A target for forming the oxide semiconductor filmhad a composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio]. Otherconditions were as follows: as for the flow of deposition gases, theflow of an argon gas was 30 sccm and the flow of an oxygen gas was 15sccm, the pressure was 0.4 Pa, the distance between the substrate andthe target was 60 mm, the radio frequency (RF) power was 0.5 kW, and thefilm thickness was 100 nm.

Further, after the oxide semiconductor film was formed, heat treatmentwas performed on the quartz substrate in each of Samples J and K, overwhich the oxide semiconductor film was formed. The heat treatment wasperformed in a dry atmosphere with a dew point of −24° C. at atemperature of 450° C. for 1 hour. In this manner, Samples J and K, ineach of which the oxide semiconductor film was formed over the quartzsubstrate, were manufactured.

In this section, low-temperature PL measurement is performed on SamplesJ and K. In the low-temperature PL measurement, the sample is irradiatedwith excited light in an atmosphere at very low temperature to giveenergy to the sample, the irradiation with the excited light is stoppedwhile electrons and holes are generated in the sample, and lightemission caused by recombination of electrons and holes generated by theirradiation with the excited light is detected by using a charge coupleddevice (CCD) or the like.

In this example, the low-temperature PL measurement was performed in ahelium gas atmosphere with a measurement temperature of 10 K. As for theexcited light, light having a wavelength of 325 nm emitted from a He—Cdgas laser was used. In addition, CCD was used for detecting lightemission.

Emission spectra of Samples J and K detected in the low-temperature PLmeasurement are shown in FIG. 24. In the graph shown in FIG. 24, thevertical axis indicates PL detection counts, and the horizontal axisindicates energy (eV) of light emission detected.

According to the graph of FIG. 24, it is found that although each ofSamples J and K has a peak in a region where the emission energy is inthe vicinity of 1.8 eV, the number of PL detection counts of Sample K issmaller than that of Sample J by about 100. Note that a peak in a regionwhere the emission energy is in the vicinity of 3.2 eV in each ofSamples J and K is attributed to a quartz window of a low-temperature PLmeasurement device.

Here, the peak in the region where the emission energy is in thevicinity of 1.8 eV in the graph of FIG. 24 indicates that an energylevel exists at a depth of about 1.8 eV from the bottom of theconduction band in the band structure of the oxide semiconductor film.This deep energy level in the band gap coincides with the trap level dueto an oxygen defect in the result of calculation of the electron densityof states in FIG. 3. Therefore, the emission peak in the region wherethe emission energy is in the vicinity of 1.8 eV in the graph of FIG. 24can be assumed to represent the energy level of the trap level due to anoxygen defect in the band diagram in FIG. 4. That is, since the numberof PL detection counts in the region where the emission energy is in thevicinity of 1.8 eV in Sample K is smaller than that in Sample J, it isassumed that the number of trap levels due to oxygen defects, that is,the number of oxygen defects is decreased in the oxide semiconductorfilm including a crystalline region with c-axis alignment.

<4. Measurement of Negative-Bias Stress Photodegradation>

In this example, a transistor including an oxide semiconductor film wasmanufactured in accordance with the above embodiment, and stress wasapplied to the transistor by applying a negative voltage to a gate ofthe transistor while irradiating the transistor with light, so that thethreshold voltage of the transistor changed depending on the length oftime to apply stress. A result of evaluating the change in thresholdvoltage of the transistor is described. Such a change in thresholdvoltage or the like of the transistor owing to the stress is referred toas negative-bias stress photodegradation.

In this section, a transistor provided with an oxide semiconductor filmin which a crystalline region with c-axis alignment described in theabove embodiment was formed (Sample L) was manufactured. In addition, asa comparative example, a transistor which was formed of a materialsimilar to that of Sample L but provided with an oxide semiconductorfilm in which a crystalline region with c-axis alignment was not formed(Sample M) was manufactured. Then, stress was applied to Samples L and Mby applying negative voltages to gates of the samples while irradiatingSamples L and M with light, and threshold voltages Vth of Samples L andM, which changed depending on the length of time to apply stress, wereevaluated. A method for manufacturing Samples L and M is describedbelow.

First, as a base film, a silicon nitride film having a thickness of 100nm and a silicon oxynitride film having a thickness of 150 nm wereformed successively by a plasma CVD method over a glass substrate, andthen a tungsten film having a thickness of 100 nm was formed over thesilicon oxynitride film by a sputtering method. The tungsten film wasetched selectively, thereby forming a gate electrode having a taperedshape. Then, as a gate insulating film, a silicon oxynitride film havinga thickness of 100 nm was formed over the gate electrode by a plasma CVDmethod.

Next, an oxide semiconductor film was formed over the gate insulatingfilm by a sputtering method. The oxide semiconductor film of Sample Lwas formed in such a manner that an oxide semiconductor film having athickness of 30 nm was stacked over an oxide semiconductor film having athickness of 5 nm functioning as a seed crystal and heat treatment wasperformed thereon to form a crystalline region with c-axis alignment.The oxide semiconductor film of Sample M was formed in such a mannerthat heat treatment was performed on an oxide semiconductor film havinga thickness of 25 nm.

First, a method for manufacturing the oxide semiconductor film of SampleL is described. The oxide semiconductor film functioning as a seedcrystal was formed by a sputtering method; as a target for forming theoxide semiconductor film, a target having a composition ratio whereIn₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio] was used. Other conditions were asfollows: the substrate temperature in deposition was 200° C., an oxygengas was 50% and an argon gas was 50% in the flow rate of depositiongases, the pressure was 0.6 Pa, the distance between the substrate andthe target was 100 mm, the direct current (DC) power was 5 kW, and thefilm thickness was 5 nm. After the oxide semiconductor film was formed,heat treatment was performed in a nitrogen atmosphere at a temperatureof 450° C. for 1 hour, whereby the oxide semiconductor film functioningas a seed crystal was crystallized. Then, over the oxide semiconductorfilm functioning as a seed crystal, the oxide semiconductor film havinga thickness of 30 nm was formed by a sputtering method under conditionssimilar to those for forming the oxide semiconductor film functioning asa seed crystal. Further, heat treatment was performed with the use of anoven in a nitrogen atmosphere at a temperature of 450° C. for 1 hour,and moreover, heat treatment was performed in a mixed atmosphere ofnitrogen and oxygen at a temperature of 450° C. for 1 hour, so that theoxide semiconductor film including a crystalline region with c-axisalignment was formed.

In addition, the oxide semiconductor film of Sample M was formed by asputtering method; as a target for forming the oxide semiconductor film,a target having a composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:2 [molarratio] was used. Other conditions were as follows: the substratetemperature in deposition was 200° C., an oxygen gas was 50% and anargon gas was 50% in the flow rate of deposition gases, the pressure was0.6 Pa, the distance between the substrate and the target was 100 mm,the direct current (DC) power was 5 kW, and the film thickness was 25nm. After the oxide semiconductor film was formed, heat treatment wasperformed with the use of a rapid thermal annealing (RTA) method in anitrogen atmosphere at a temperature of 650° C. for 6 minutes. Further,heat treatment was performed with the use of an oven in a mixedatmosphere of nitrogen and oxygen at a temperature of 450° C. for 1hour, so that the oxide semiconductor film which did not include acrystalline region with c-axis alignment was formed.

Next, over the oxide semiconductor film, a conductive film in which atitanium film, an aluminum film, and a titanium film were stacked wasformed by a sputtering method and selectively etched to form a sourceelectrode and a drain electrode. Then, a silicon oxide film having athickness of 400 nm was formed as a first interlayer insulating film.Further, as a second interlayer insulating film, an insulating filmformed of an acrylic resin having a thickness of 1.5 μm was formed.Finally, heat treatment was performed in a nitrogen atmosphere at atemperature of 250° C. for 1 hour, so that Samples L and M weremanufactured.

Then, stress was applied to Samples L and M by applying a negativevoltage to gates of the samples while irradiating Samples L and M withlight, and Id-Vg characteristics of Samples L and M depending on thelength of time to apply stress were measured, so that the amount ofchange in threshold voltage before and after the application of stresswas obtained.

The stress was applied in an air atmosphere at room temperature underthe following condition: the gate voltage was −20 V, the drain voltagewas 0.1 V, the source voltage was 0 V, and illuminance of light used forirradiation was 36000 (1×). Id-Vg characteristics of Samples L and Mwere measured by varying the length of time to apply stress as follows:100 seconds, 300 seconds, 600 seconds, 1000 seconds, 1800 seconds, 3600seconds, 7200 seconds, 10000 seconds, 18000 seconds, and 43200 seconds(12 hours). In measuring the Id-Vg characteristics, the drain voltagewas set to +10 V, the gate voltage was swept in the range of from −10 Vto +10 V, and the other conditions were similar to those in applyingstress.

FIG. 25 is a graph showing the amount of change in threshold voltage ofSamples L and M. In the graph shown in FIG. 25, the vertical axisindicates the amount of change in threshold voltage Δ Vth (V) and thehorizontal axis indicates stress time (sec).

In FIG. 25, whereas the amount of change in threshold voltage Δ Vth ofSample L is about −1 V at maximum, the amount of change in thresholdvoltage Δ Vth of Sample M is as large as about −2 V at maximum; that is,the amount of change in threshold voltage ΔVth of Sample L is reduced toabout half of that of Sample M.

Accordingly, a transistor provided with an oxide semiconductor filmincluding a crystalline region with c-axis alignment has more stableelectric characteristics with respect to light irradiation or stress ofa gate voltage, and the reliability thereof is improved.

<5. Measurement Using Photoresponse Defect Evaluation Method>

In this section, a transistor including an oxide semiconductor film wasformed in accordance with the above embodiment, and a photoresponsedefect evaluation method was performed on the transistor and stabilityof the oxide semiconductor film with respect to light irradiation wasevaluated. A result thereof is described below.

In this section, a photoresponse defect evaluation method was performedon Samples N and O which were manufactured by methods similar to thoseof Samples L and M. In a photoresponse defect evaluation method,relaxation of current (photoelectric current) which flows by irradiatinga semiconductor film with light is measured, relaxation time τ iscalculated by fitting of a graph showing relaxation of photoelectriccurrent with the use of a formula represented by linear combination ofexponential functions, and defects in the semiconductor film areevaluated from the relaxation time τ.

Here, current ID is represented by linear combination of exponentialfunctions having two terms by using relaxation time τ₁ corresponding torapid response and relaxation time τ₂ corresponding to slow response(τ₂>τ₁), resulting in the following formula.

$\begin{matrix}{{ID} = {{A\;{\mathbb{e}}^{- \frac{t}{\tau_{1}}}} + {B\;{\mathbb{e}}^{- \frac{t}{\tau_{2}}}}}} & \lbrack {{Formula}\mspace{14mu} 3} \rbrack\end{matrix}$

In a photoresponse defect evaluation method described in this section,after a dark state for 60 seconds, light irradiation was performed for600 seconds, and then, the light irradiation was stopped and relaxationof photoelectric current was measured for 3000 seconds. The wavelengthand the intensity of irradiation light were set to 400 nm and 3.5mW/cm², respectively, voltages of a gate electrode and a sourceelectrode of each of Samples N and O were fixed to 0 V, a low voltage of0.1 V was applied to a drain electrode, and the value of photoelectriccurrent was measured. Note that the channel length L and the channelwidth W of each of Samples N and O were 30 μm and 10000 μm,respectively.

FIGS. 26A and 26B are graphs showing the amount of change inphotoelectric current of Samples N and O in a photoresponse defectevaluation method. In the graphs shown in FIGS. 26A and 26B, thevertical axis indicates photoelectric current ID and the horizontal axisindicates time t (sec). Fitting of the graphs shown in FIGS. 26A and 26Bis performed with a formula represented by linear combination ofexponential functions, resulting in the following formula.

$\begin{matrix}{{ID} = {{0.95\;{\mathbb{e}}^{- \frac{t}{0.3}}} + {0.02\;{\mathbb{e}}^{- \frac{t}{39}}}}} & \lbrack {{Formula}\mspace{14mu} 4} \rbrack \\{{ID} = {{0.56\;{\mathbb{e}}^{- \frac{t}{3.8}}} + {0.22\;{\mathbb{e}}^{- \frac{t}{96}}}}} & \lbrack {{Formula}\mspace{14mu} 5} \rbrack\end{matrix}$

From FIGS. 26A and 26B, it is found that the maximum value ofphotoelectric current is smaller and the relaxation time τ₁ and therelaxation time τ₂ are shorter in Sample N including an oxidesemiconductor film including a crystalline region with c-axis alignmentthan in Sample O. In Sample N, the maximum value of photoelectriccurrent Imax was 6.2×10⁻¹¹ A, the relaxation time τ₁ was 0.3 seconds,and the relaxation time τ₂ was 39 seconds. On the other hand, in SampleO, the maximum value of photoelectric current Imax was 8.0×10⁻⁹ A, therelaxation time τ₁ was 3.9 seconds, and the relaxation time τ₂ was 98seconds.

It was found that in both Samples N and O, fitting of relaxation ofphotoelectric current ID could be performed by linear combination ofexponential functions having at least two kinds of relaxation time. Thisindicates that relaxation of photoelectric current ID has two kinds ofrelaxation processes in both Samples N and O. This coincides with therelaxation process of photoelectric current with two kinds ofrecombination models illustrated in FIGS. 5A and 5B. That is, it wasindicated that, as in the band diagrams of FIGS. 5A and 5B in the aboveembodiment, a trap level exists in the band gap of the oxidesemiconductor.

Further, the relaxation time τ₁ and the relaxation time τ₂ were shorterin Sample N including an oxide semiconductor film including acrystalline region with c-axis alignment than in Sample O. Thisindicates that the number of trap levels due to oxygen defects in therecombination models in FIGS. 5A and 5B is smaller in Sample N than inSample O. This is because in Sample N, the number of defects in theoxide semiconductor film, which can function as trap levels, is reducedsince the oxide semiconductor film includes a crystalline region withc-axis alignment.

From the above, the transistor has a more stable structure with respectto light irradiation by formation of a crystalline region with c-axisalignment in the oxide semiconductor film. By using such an oxidesemiconductor film for a transistor, a highly reliable transistor havingstable electric characteristics can be provided.

<6. TDS Analysis>

In this section, an oxide semiconductor film was formed in accordancewith the above embodiment, and the oxide semiconductor film wasevaluated with the use of thermal desorption spectroscopy (TDS). Aresult thereof is described below.

In this section, an oxide semiconductor film was formed over a quartzsubstrate by a sputtering method to form Sample P1 with a substratetemperature in deposition of room temperature, Sample P2 with asubstrate temperature in deposition of 100° C., Sample P3 with asubstrate temperature in deposition of 200° C., Sample P4 with asubstrate temperature in deposition of 300° C., and Sample P5 with asubstrate temperature in deposition of 400° C. Here, each of Samples P1,P2, and P3 is an oxide semiconductor film which does not include acrystalline region with c-axis alignment, and each of Samples P4 and P5is an oxide semiconductor film which includes a crystalline region withc-axis alignment. A target for forming the oxide semiconductor film hada composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio]. Otherconditions were as follows: as for the flow of deposition gases, theflow of an argon gas was 30 sccm and the flow of an oxygen gas was 15sccm, the pressure was 0.4 Pa, the distance between the substrate andthe target was 60 mm, the radio frequency (RF) power was 0.5 kW, and thefilm thickness was 50 nm. The quartz substrate was subjected to heattreatment in a dry atmosphere at 850° C. in advance in order to reducefactors of a desorption gas from the substrate in TDS analysis.

Note that TDS analysis is an analysis method in which a sample is heatedin a vacuum case using a halogen lamp and gas components generated fromthe whole sample when the temperature of the sample is increased aredetected by a quadrupole mass spectrometer (QMS). Detected gascomponents are distinguished from each other by the value of M/z(mass/charge) and detected in the form of a mass spectrum.

In this example, TDS analysis was performed with WA1000S manufactured byESCO Ltd. A mass spectrum where M/z=18 corresponding to H₂O was detectedunder the following measurement conditions: the SEM voltage was 1500 V,the temperature of a substrate surface was room temperature to 400° C.,the degree of vacuum was lower than or equal to 1.5×10⁻⁷ Pa, Dwell Timewas 0.2 (sec/U), and the temperature rising rate was 30 (° C./min).

The results of TDS analyses of Samples P1 to P5 are shown in FIG. 27. Inthe graph shown in FIG. 27, the vertical axis indicates the amount ofwater molecules that are desorbed (M/z=18) [molecules/cm³] (counts), andthe horizontal axis indicates substrate temperature (° C.). Here, theamount of water molecules that are desorbed is obtained by calculatingthe value of an integral at a temperature in the vicinity of 300° C. ina mass spectrum where M/z=18, that is, it is the amount of watermolecules that are desorbed from the oxide semiconductor film. In themass spectrum where M/z=18, a peak exists also in a region where thetemperature is in the vicinity of 100° C., but this peak is assumed toindicate the amount of moisture adsorbed onto the surface of the oxidesemiconductor film and thus is not counted as the amount of watermolecules that are desorbed.

The graph of FIG. 27 shows that as the substrate temperature indeposition is increased, the amount of water molecules desorbed fromeach sample is decreased. Thus, it can be said that by increasing thesubstrate temperature in deposition, that is, by forming a crystallineregion with c-axis alignment in the oxide semiconductor film, moleculesor ions containing H (hydrogen atoms), typified by H₂O (water)molecules, contained in the oxide semiconductor film can be reduced.

As described above, by forming an oxide semiconductor film including acrystalline region with c-axis alignment, impurities such as moleculesor ions containing H (hydrogen atoms), typified by H₂O (water)molecules, which can be sources for supplying carriers in the oxidesemiconductor film, can be reduced. Consequently, the electricconductivity of the oxide semiconductor film can be prevented fromchanging, whereby the reliability of a transistor including the oxidesemiconductor film can be improved.

<7. Secondary Ion Mass Spectrometry>

In this section, an oxide semiconductor film was formed in accordancewith the above embodiment, and the oxide semiconductor film wasevaluated with the use of secondary ion mass spectrometry (SIMS). Aresult thereof is described below.

In this section, an oxide semiconductor film was formed over a quartzsubstrate by a sputtering method to form Samples Q1 to Q7 with asubstrate temperature in deposition of room temperature and Samples R1to R7 with a substrate temperature in deposition of 400° C. Here, eachof Samples Q1 to Q7 is an oxide semiconductor film which does notinclude a crystalline region with c-axis alignment, and each of SamplesR1 and R7 is an oxide semiconductor film which includes a crystallineregion with c-axis alignment. A target for forming the oxidesemiconductor film had a composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:2[molar ratio]. Other conditions were as follows: as for the flow ofdeposition gases, the flow of an argon gas was 30 sccm and the flow ofan oxygen gas was 15 sccm, the pressure was 0.4 Pa, the distance betweenthe substrate and the target was 60 mm, the radio frequency (RF) powerwas 0.5 kW, and the film thickness was 300 nm. The quartz substrate wassubjected to heat treatment in a nitrogen atmosphere at 850° C. for 1hour in advance.

After the oxide semiconductor film was formed, heat treatment wasperformed on the quartz substrate over which the oxide semiconductorfilm was formed in each of Samples Q2 to Q7 and Samples R2 to R7. Theheat treatment was performed in such a manner that the temperature wasincreased to a predetermined temperature in a nitrogen atmosphere, theatmosphere was switched from the nitrogen atmosphere to an oxygenatmosphere, the predetermined temperature was kept for 1 hour in theoxygen atmosphere, and then the temperature was decreased in the oxygenatmosphere. The predetermined temperature was 200° C. in Samples Q2 andR2, 250° C. in Samples Q3 and R3, 350° C. in Samples Q4 and R4, 450° C.in Samples Q5 and R5, 550° C. in Samples Q6 and R6, and 650° C. inSamples Q7 and R7. In this manner, Samples Q1 to Q7 and Samples R1 to R7in each of which the oxide semiconductor film was formed over the quartzsubstrate were manufactured.

In this section, SIMS analysis was performed on each of Samples Q1 to Q7and Samples R1 to R7. The results of the SIMS analyses of Samples Q1 toQ7 are shown in FIG. 28A, and the results of the SIMS analyses ofSamples R1 to R7 are shown in FIG. 28B. In the graphs shown in FIGS. 28Aand 28B, the vertical axis indicates the concentration (atoms/cm³) ofhydrogen (H), and the horizontal axis indicates the depth (nm) of theoxide semiconductor film and the depth (nm) of the quartz substrate,from the surface of the oxide semiconductor film.

It seems from the graphs in FIGS. 28A and 28B that: the concentrationsof hydrogen in the oxide semiconductor films in Samples Q1 and R1 aresubstantially equal to each other, while the concentrations of hydrogenin the oxide semiconductor films in Samples R2 to R7 are lower thanthose of Samples Q2 to Q7, respectively. This shows that hydrogen isless likely to enter the oxide semiconductor film in heat treatmentperformed later as the substrate temperature in forming the oxidesemiconductor film is higher. In particular, the graph of Samples Q3 toQ5 shows that as the temperature in heat treatment is increased,hydrogen enters from the surface side of the oxide semiconductor filmand a layer in which the concentration of hydrogen is high spreads to aninner part of the oxide semiconductor film, and as the temperature isfurther increased, hydrogen is eliminated from the surface side of theoxide semiconductor film. In such a manner, in the case where the oxidesemiconductor film does not include a crystalline region with c-axisalignment, entry or elimination of hydrogen is caused owing to heattreatment. However, such a phenomenon is not observed in Samples R2 toR7 each including a crystalline region with c-axis alignment in theoxide semiconductor film.

It can be considered that this is because by forming a crystallineregion with c-axis alignment in the oxide semiconductor film with thesubstrate temperature increased in forming the oxide semiconductor film,dangling bonds to which hydrogen is likely to be bonded and the like arereduced in the oxide semiconductor film.

Accordingly, by forming a crystalline region with c-axis alignment in anoxide semiconductor film with the substrate temperature increased informing the oxide semiconductor film, increase in hydrogen which can bea source for supplying a carrier in the oxide semiconductor film owingto heat treatment can be prevented. Consequently, the electricconductivity of the oxide semiconductor film can be prevented fromchanging, whereby the reliability of a transistor including the oxidesemiconductor film can be improved.

EXPLANATION OF REFERENCE

11: site, 12: In atom, 13: Ga atom, 14: Zn atom, 15: O atom, 31:treatment chamber, 33: evacuation unit, 35: gas supply unit, 37: powersupply device, 40: substrate support, 41: target, 43: ion, 45: atom, 47:atom, 51: substrate, 53: base insulating film, 55: oxide semiconductorfilm, 56: oxide semiconductor film, 59: oxide semiconductor film, 63:gate insulating film, 65: gate electrode, 69: insulating film, 120:transistor, 130: transistor, 140: transistor, 150: transistor, 160:transistor, 170: transistor, 180: transistor, 351: substrate, 353: baseinsulating film, 359: oxide semiconductor film, 363: gate insulatingfilm, 365: gate electrode, 369: insulating film, 371: metal oxide film,373: metal oxide film, 55 a: seed crystal, 55 b: oxide semiconductorfilm, 56 a: seed crystal, 56 b: oxide semiconductor film, 61 a: sourceelectrode, 61 b: drain electrode, 361 a: source electrode, 361 b: drainelectrode, 500: substrate, 501: pixel portion, 502: scan line drivercircuit, 503: scan line driver circuit, 504: signal line driver circuit,510: capacitor wiring, 512: gate wiring, 513: gate wiring, 514: drainelectrode layer, 516: transistor, 517: transistor, 518: liquid crystalelement, 519: liquid crystal element, 520: pixel, 521: switchingtransistor, 522: driving transistor, 523: capacitor, 524: light-emittingelement, 525: signal line, 526: scan line, 527: power supply line, 528:common electrode, 1001: main body, 1002: housing, 1004: key boardbutton, 1021: main body, 1022: fixing portion, 1023: display portion,1024: operation button, 1025: external memory slot, 1030: housing, 1031:housing, 1032: display panel, 1033: speaker, 1034: microphone, 1035:operation key, 1036: pointing device, 1037: camera lens, 1038: externalconnection terminal, 1040: solar cell, 1041: external memory slot, 1050:television set, 1051: housing, 1052: storage medium recording andreproducing portion, 1053: display portion, 1054: external connectionterminal, 1055: stand, 1056: external memory, 1003 a: display portion,1003 b: display portion

This application is based on Japanese Patent Application serial no.2010-270557 filed with Japan Patent Office on Dec. 3, 2010, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a gateelectrode; an oxide semiconductor film comprising a first crystallineregion and a second crystalline region; and a gate insulating filmbetween the gate electrode and the oxide semiconductor film, whereineach of the first crystalline region and the second crystalline regionincludes a crystal structure in which a c-axis is substantiallyperpendicular to a surface of the oxide semiconductor film, wherein theoxide semiconductor film is in a non-single-crystal state, wherein ana-axis direction of the first crystalline region is different from ana-axis direction of the second crystalline region, and wherein a b-axisdirection of the first crystalline region is different from a b-axisdirection of the second crystalline region.
 2. The semiconductor deviceaccording to claim 1, wherein a concentration of lithium in the oxidesemiconductor film is 5×10¹⁵ atoms/cm³ or lower.
 3. The semiconductordevice according to claim 1, wherein a concentration of sodium in theoxide semiconductor film is 5×10¹⁶ atoms/cm³ or lower.
 4. Thesemiconductor device according to claim 1, wherein a concentration ofpotassium in the oxide semiconductor film is 5×10¹⁵ atoms/cm³ or lower.5. The semiconductor device according to claim 1, further comprising ametal oxide film in contact with the oxide semiconductor film, whereinan energy gap of the metal oxide film is larger than an energy gap ofthe oxide semiconductor film.
 6. The semiconductor device according toclaim 1, wherein a size of the first crystalline region is greater thanor equal to 1 nm and less than or equal to 1000 nm.
 7. The semiconductordevice according to claim 1, wherein an angle between the c-axis and anormal of the surface of the oxide semiconductor film is greater than orequal to 0° and less than or equal to 20°.
 8. The semiconductor deviceaccording to claim 1, wherein the oxide semiconductor film issubstantially intrinsic.
 9. The semiconductor device according to claim1, wherein alignment along an a-b plane of the crystal structure is notindicated by a X-ray diffraction spectrum of the oxide semiconductorfilm, and wherein the X-ray diffraction spectrum is measured by anin-plane method while rotating the oxide semiconductor film using thec-axis as a rotation axis.
 10. A semiconductor device comprising: a gateelectrode; an oxide semiconductor film comprising a first crystallineregion and a second crystalline region; and a gate insulating filmbetween the gate electrode and the oxide semiconductor film, whereineach of the first crystalline region and the second crystalline regionincludes a crystal structure in which a c-axis is substantiallyperpendicular to a surface of the oxide semiconductor film, wherein theoxide semiconductor film is in a non-single-crystal state, wherein ana-axis direction of the first crystalline region is different from ana-axis direction of the second crystalline region, wherein a b-axisdirection of the first crystalline region is different from a b-axisdirection of the second crystalline region, and wherein a concentrationof hydrogen in the oxide semiconductor film is 5×10¹⁹ atoms/cm³ orlower.
 11. The semiconductor device according to claim 10, wherein aconcentration of lithium in the oxide semiconductor film is 5×10¹⁵atoms/cm³ or lower.
 12. The semiconductor device according to claim 10,wherein a concentration of sodium in the oxide semiconductor film is5×10¹⁶ atoms/cm³ or lower.
 13. The semiconductor device according toclaim 10, wherein a concentration of potassium in the oxidesemiconductor film is 5×10¹⁵ atoms/cm³ or lower.
 14. The semiconductordevice according to claim 10, further comprising a metal oxide film incontact with the oxide semiconductor film, wherein an energy gap of themetal oxide film is larger than an energy gap of the oxide semiconductorfilm.
 15. The semiconductor device according to claim 10, wherein a sizeof the first crystalline region is greater than or equal to 1 nm andless than or equal to 1000 nm.
 16. The semiconductor device according toclaim 10, wherein an angle between the c-axis and a normal of thesurface of the oxide semiconductor film is greater than or equal to 0°and less than or equal to 20°.
 17. The semiconductor device according toclaim 10, wherein the oxide semiconductor film is substantiallyintrinsic.
 18. The semiconductor device according to claim 10, whereinalignment along an a-b plane of the crystal structure is not indicatedby a X-ray diffraction spectrum of the oxide semiconductor film, andwherein the X-ray diffraction spectrum is measured by an in-plane methodwhile rotating the oxide semiconductor film using the c-axis as arotation axis.
 19. A semiconductor device comprising: a gate electrode;an oxide semiconductor film comprising a first crystalline region and asecond crystalline region; and a gate insulating film between the gateelectrode and the oxide semiconductor film, wherein each of the firstcrystalline region and the second crystalline region includes a crystalstructure in which a c-axis is substantially perpendicular to a surfaceof the oxide semiconductor film, wherein the oxide semiconductor film isin a non-single-crystal state, wherein an a-axis direction of the firstcrystalline region is different from an a-axis direction of the secondcrystalline region, wherein a b-axis direction of the first crystallineregion is different from a b-axis direction of the second crystallineregion, and wherein a spin density of a signal in a region where a gvalue is in the vicinity of 1.93 in ESR measurement of the oxidesemiconductor film is lower than 1.3×10¹⁸ spins/cm³.
 20. Thesemiconductor device according to claim 19, wherein a concentration oflithium in the oxide semiconductor film is 5×10¹⁵ atoms/cm³ or lower.21. The semiconductor device according to claim 19, wherein aconcentration of sodium in the oxide semiconductor film is 5×10¹⁶atoms/cm³ or lower.
 22. The semiconductor device according to claim 19,wherein a concentration of potassium in the oxide semiconductor film is5×10¹⁵ atoms/cm³ or lower.
 23. The semiconductor device according toclaim 19, further comprising a metal oxide film in contact with theoxide semiconductor film, wherein an energy gap of the metal oxide filmis larger than an energy gap of the oxide semiconductor film.
 24. Thesemiconductor device according to claim 19, wherein a size of the firstcrystalline region is greater than or equal to 1 nm and less than orequal to 1000 nm.
 25. The semiconductor device according to claim 19,wherein an angle between the c-axis and a normal of the surface of theoxide semiconductor film is greater than or equal to 0° and less than orequal to 20°.
 26. The semiconductor device according to claim 19,wherein the oxide semiconductor film is substantially intrinsic.
 27. Thesemiconductor device according to claim 19, wherein alignment along ana-b plane of the crystal structure is not indicated by a X-raydiffraction spectrum of the oxide semiconductor film, and wherein theX-ray diffraction spectrum is measured by an in-plane method whilerotating the oxide semiconductor film using the c-axis as a rotationaxis.
 28. A semiconductor device comprising: a gate electrode; an oxidesemiconductor film comprising a first crystalline region and a secondcrystalline region; and a gate insulating film between the gateelectrode and the oxide semiconductor film, wherein each of the firstcrystalline region and the second crystalline region includes a crystalstructure in which a c-axis is substantially perpendicular to a surfaceof the oxide semiconductor film, wherein the oxide semiconductor film isin a non-single-crystal state, wherein an a-axis direction of the firstcrystalline region is different from an a-axis direction of the secondcrystalline region, wherein a b-axis direction of the first crystallineregion is different from a b-axis direction of the second crystallineregion, and wherein a concentration of an alkali metal in the oxidesemiconductor film is 5×10¹⁶ atoms/cm³ or lower.
 29. The semiconductordevice according to claim 28, wherein a concentration of lithium in theoxide semiconductor film is 5×10¹⁵ atoms/cm³ or lower.
 30. Thesemiconductor device according to claim 28, wherein a concentration ofsodium in the oxide semiconductor film is 5×10¹⁶ atoms/cm³ or lower. 31.The semiconductor device according to claim 28, wherein a concentrationof potassium in the oxide semiconductor film is 5×10¹⁵ atoms/cm³ orlower.
 32. The semiconductor device according to claim 28, furthercomprising a metal oxide film in contact with the oxide semiconductorfilm, wherein an energy gap of the metal oxide film is larger than anenergy gap of the oxide semiconductor film.
 33. The semiconductor deviceaccording to claim 28, wherein a size of the first crystalline region isgreater than or equal to 1 nm and less than or equal to 1000 nm.
 34. Thesemiconductor device according to claim 28, wherein an angle between thec-axis and a normal of the surface of the oxide semiconductor film isgreater than or equal to 0° and less than or equal to 20°.
 35. Thesemiconductor device according to claim 28, wherein the oxidesemiconductor film is substantially intrinsic.
 36. The semiconductordevice according to claim 28, wherein alignment along an a-b plane ofthe crystal structure is not indicated by a X-ray diffraction spectrumof the oxide semiconductor film, and wherein the X-ray diffractionspectrum is measured by an in-plane method while rotating the oxidesemiconductor film using the c-axis as a rotation axis.